Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing

Hung, Tai-Ho; Lee, P.T.; Tsai, Chih-Yung; Kao, C. R.

doi:10.1016/j.jmrt.2020.09.045

Cited by 12 publications

(8 citation statements)

References 13 publications

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“…Figure 3 shows the cross-sectional microstructure of the as-bonded Cu/In interface after soldering at 180 °C for 30 s followed by water quenching. Consistent with our previous study [ 15 ], a two-phase layer and some heterogeneously precipitated faceted Cu 11 In 9 particles formed at the Cu/In interface. The two-phase layer comprised Cu 11 In 9 and In, where In corresponded to the dark areas produced when argon gas removed the soft In surrounded by tough Cu 11 In 9 during ion polishing.…”

Section: Resultssupporting

confidence: 93%

“…These islands gradually joined together and became a thick and continuous Cu 11 In 9 layer after 2000 h of aging, as illustrated in Figure 4 h,j. Since the original Cu/In interface was between the faceted Cu 11 In 9 particles and the two-phase layer [ 15 ], the growth front of the continuous Cu 11 In 9 layer was observed to be at the Cu side, indicating that In was the dominant diffusion species in the Cu/In system at 100 °C. Accordingly, In atoms diffused across the continuous CuIn 2 and Cu 11 In 9 layers to react with Cu and formed new Cu 11 In 9 .…”

Section: Resultsmentioning

confidence: 99%

“…Fundamental information on the interfacial reactions between In and Cu is crucial for evaluating the feasibility of In solder. Our recent study revealed the interfacial reactions between liquid In and solid Cu at 180 °C [ 15 ]. A two-phase layer consisting of Cu 11 In 9 and In and faceted Cu 11 In 9 particles over the two-phase layer formed at the Cu/In interface [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

“…Our recent study revealed the interfacial reactions between liquid In and solid Cu at 180 °C [ 15 ]. A two-phase layer consisting of Cu 11 In 9 and In and faceted Cu 11 In 9 particles over the two-phase layer formed at the Cu/In interface [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

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Long-Term Aging Study on the Solid State Interfacial Reactions of In on Cu Substrate

Hung,

Chang,

Tsai

et al. 2023

Materials

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Indium is considered a candidate low-temperature solder because of its low melting temperature and excellent mechanical properties. However, the solid-state microstructure evolution of In with different substrates has rarely been studied due to the softness of In. To overcome this difficulty, cryogenic broad Ar+ beam ion polishing was used to produce an artifact-free Cu/In interface for observation. In this study, we accomplished phase identification and microstructure investigation at the Cu/In interface after long-term thermal aging. CuIn2 was observed to grow at the Cu/In interface and proved to be a stable phase in the Cu–In binary system. The peritectoid temperature of the Cu11In9 + In → CuIn2 reaction was confirmed to be between 100 and 120 °C. In addition, the growth rate of CuIn2 was discovered to be dominated by the curvature of the reactant Cu11In9/In phase and the temperature difference with the peritectoid temperature. Finally, a comprehensive microstructural evolution mechanism of the Cu/In solid-state interfacial reaction was proposed.

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Long-Term Aging Study on the Solid State Interfacial Reactions of In on Cu Substrate

Hung,

Chang,

Tsai

et al. 2023

Materials

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“…However, during mechanical polishing, the silicon carbide particles on the sandpaper and diamond abrasives in the polishing fluid were embedded in the soft In-Sn alloy. It has been reported that ion milling can be used in place of mechanical polishing for samples that are damaged by mechanical polishing [24]. An ion milling system (Hitachi, IM4000Plus, Tokyo,…”

Section: Cross-section Observation and Ion Millingmentioning

confidence: 99%

Artifact-Free Microstructures in the Interfacial Reaction between Eutectic In-48Sn and Cu Using Ion Milling

2023

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Eutectic In-48Sn was considered a promising candidate for low-temperature solder due to its low melting point and excellent mechanical properties. Both Cu2(In,Sn) and Cu(In,Sn)2 formation were observed at the In-48Sn/Cu interface after 160 °C soldering. However, traditional mechanical polishing produces many defects at the In-48Sn/Cu interface, which may affect the accuracy of interfacial reaction investigations. In this study, cryogenic broad Ar+ beam ion milling was used to investigate the interfacial reaction between In-48Sn and Cu during soldering. The phase Cu6(Sn,In)5 was confirmed as the only intermetallic compound formed during 150 °C soldering, while Cu(In,Sn)2 formation was proven to be caused by room-temperature aging after soldering. Both the Cu6(Sn,In)5 and Cu(In,Sn)2 phases were confirmed by EPMA quantitative analysis and TEM selected area electron diffraction. The microstructure evolution and growth mechanism of Cu6(Sn,In)5 during soldering were proposed. In addition, the Young’s modulus and hardness of Cu6(Sn,In)5 were determined to be 119.04 ± 3.94 GPa and 6.28 ± 0.13 GPa, respectively, suggesting that the doping of In in Cu6(Sn,In)5 has almost no effect on Young’s modulus and hardness.

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Prediction of Interfacial Reaction Between Cu and In During Low-Temperature Soldering

Chu

Lee

2022

J. Phase Equilib. Diffus.

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Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing

Cited by 12 publications

References 13 publications

Long-Term Aging Study on the Solid State Interfacial Reactions of In on Cu Substrate

Long-Term Aging Study on the Solid State Interfacial Reactions of In on Cu Substrate

Artifact-Free Microstructures in the Interfacial Reaction between Eutectic In-48Sn and Cu Using Ion Milling

Prediction of Interfacial Reaction Between Cu and In During Low-Temperature Soldering

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