“…In the last few decades, nano-structures like selfassembled III-V QDs have been investigated due to their wide range of novel physical properties. Advantages in this respect led to a number of different applications, such as active media in semiconductor lasers [1][2][3], as building blocks for quantum information devices, particularly for quantum repeaters [4][5][6], as efficient single and entangled photon sources [7][8][9][10][11][12][13][14][15], including highlyentangled states for quantum computing [16][17][18][19], or as nanomemories [20][21][22][23][24]. Among III-V QDs, particularly type-I indirect (InGa)(AsSb)/GaAs QDs embedded in a GaP(001) matrix [25,26] have recently attracted attention due to their promising use as storage units for the QD-Flash nanomemory cells [25,26], as potentially effective entangled photon sources [27], owing to their smaller fine-structure splitting (FSS) of the ground state exciton compared to well-known type-I systems such as (InGa)As/GaAs [13,14], and as quantum gates [27][28][29][30].…”