Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure

Abstract

To develop voltage‐controlled magnetization switching technologies for spintronics applications, a highly (422)‐oriented Co2FeSi layer on top of the piezoelectric PMN‐PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra‐thin layer. The strength of the growth‐induced magnetic anisotropy of the (422)‐oriented Co2FeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown Co2FeSi layers. As a result, a giant converse magnetoelectric effect (over 10−5 s m−1) and a non‐volatile binary state at zero electric field are simultaneously achieved in the (422)‐oriented Co2FeSi/V/PMN‐PT(011) multiferroic heterostructure. This study leads to a way toward magnetoresistive random‐access‐memory (MRAM) with a low power writing technology.