Artificial Indium‐Tin‐Oxide Synaptic Transistor by Inkjet Printing Using Solution‐Processed ZrO_x Gate Dielectric

Abstract

Inkjet-printed indium-tin-oxide (ITO) synaptic thin-film transistors (TFTs) using solution-processed high-k zirconium oxide (ZrO x) gate dielectric layer are reported. The effect of ZrO x annealing temperature from 300 to 500 C on the TFT performance is investigated. The optimized ZrO x gate dielectric layer of the ITO TFT can mimic biological synaptic response for the realization of intelligent computers and artificial bionic brain. The strong synaptic behavior of the ITO TFT exhibiting the on/off current ratio of %10 6 can be obtained at the ZrO x annealing temperature of 300 C. The amount of hydroxyl (─OH) groups in the dielectric film can be a crucial factor for the formation of an electric double layer (EDL) on the top region of the gate dielectric. The device exhibits the excitatory postsynaptic current (EPSC), inhibitory postsynaptic current (IPSC), and paired-pulse facilitation (PPF). Therefore, the inkjet-printed ITO TFT using printed ZrO x gate dielectric can be used for low-cost synaptic TFTs.

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics

“…Therefore, it is very different from the mechanism of forming an electric double layer (EDL) at the gate insulator and semiconductor interface. [27,31,34,56,[66][67][68][69][70][71] As shown in Figure 4a, in the initial state, before applying bias voltage to the gate and drain electrodes, positive metal ions and negative O ions are aligned in c-axis, and a lot of V o + exist. This is an equilibrium state.…”

“…[22][23][24] Note that short-channel transistors can be available with oxide TFTs. [25,26] Table 1 shows the summary of the synaptic transistors based on MO semiconductors such as IGZO, [27][28][29][30] ITO, [31] IZO, [32] ZnO [33] and In 2 O 3 . [34] They use electrolytes or ferroelectric materials such as chitosan, [32] Ta 2 O 3 , [33] nanoparticles SiO 2 , [27] Gd 2 O 3 , [34] Al 2 O 3 [28] and HfZrO x [29] as gate insulator (GI) to…”

Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors

“…Depending on the behavior of the defects (or residuals) clockwise (Bolat et al, 2019) or counterclockwise hysteresis (Bolat et al, 2020) can be observed in the transfer characteristics of the device. Counterclockwise hysteresis was reported with various dielectrics cured at low temperatures (T < 300 °C) such as AlO x (Liang et al, 2020a), GdO x (Zhou et al, 2020), and ZrO x (Kim et al, 2020). This behavior was usually complemented with unprecedentedly high mobility values compared to vacuum-based counterparts, which were reflected as mA range ON currents in the transistors (Daunis et al, 2018).…”

Artificial HfO2/TiOx Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing

“…To ensure that artificial synapses can be used in neuromorphic computing, memristive devices with a tunable memory window and high uniformity are vitally important. Among the candidates for artificial synapses, HfO 2 /TiO x memristors are preferred for their compatibility with CMOS and remarkable characteristics of resistance switching [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. Compared with memristors based on the low-dimensional structure of TiO x from nanoparticles to nanorods [ 22 , 23 , 24 ], the advantage of HfO y /TiO x bilayers lies in two main aspects.…”