Artificial Optoelectronic Synapses Based on TiN_xO_2–x/MoS₂ Heterojunction for Neuromorphic Computing and Visual System

Abstract

Being capable of dealing with both electrical signals and light, artificial optoelectronic synapses are of great importance for neuromorphic computing and are receiving a burgeoning amount of interest in visual information processing. In this work, an artificial optoelectronic synapse composed of Al/TiNxO2–x/MoS2/ITO (H‐OSD) is proposed and experimentally realized. The H‐OSD can enable basic electrical voltage‐induced synaptic functions such as the long/short‐term plasticity and moreover the synaptic plasticity can be electrically adjusted. In response to the light stimuli, versatile advanced synaptic functions including long/short‐term memory, and learning‐forgetting‐relearning are successfully demonstrated, which could enhance the information processing capability for neuromorphic computing. Most importantly, based on these light‐induced salient features, a 4 × 4 synapse array is developed to show the potential application of the proposed H‐OSD in constructing artificial visual system. It is shown that the perceiving and memorizing of the light information that are respectively relevant to the visual perception and visual memory functions, can be readily attained through tuning of the light intensity and the number of illuminations. As such, the proposed optoelectronic synapse shows great potentials in both neuromorphic computing and visual information processing and will facilitate the applications such as electronic eyes and light‐driven neurorobotics.

Light-induced perovskite dynamic transformation enabling a photodetector to mimic a neuromorphic vision sensing system

“…graphene) as photosensitive materials. 8,10,14–17 These materials have high carrier mobility and suitable band gaps, but they are mostly made by high-temperature CVD or PVD. The harsh conditions in fabrication bring high costs and hamper their subsequent development for practical applications.…”

Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing

“…The synergy of optical and electrical stimulations leads to higher selectivity, bandwidth, and ultrafast propagation speed, facilitating the specific functional synaptic systems against external optical stimuli. As the physical properties of 2D TMC can be strongly influenced by the adjacent layers, there have been reports on optoelectronic synapses based on the heterostructure of 2D TMCs on substrates or gate dielectrics, exhibiting optical and electrical synergetic neuromorphic functions [ 89 , 161 – 163 ]. For example, Zhou and coworkers reported a multi-functional artificial neural synapses transistor based on a hybrid heterojunction of MoS 2 /perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) with neuromorphic functions of STP and LTP [ 162 ].…”

“…demonstrated a heterostructured (TiN x O 2-x /MoS 2 ) optoelectronic synapse, exhibiting both electrical and photonic synaptic devices. They prepared ~ 50-nm-thick MoS 2 layer on indium tin oxide (ITO) electrode by hydrothermal method and the TiN x O 2− x films grown on MoS 2 [ 161 ]. The Al electrode is used as the top electrode.…”

“… Reproduced with permission from Ref. [ 161 ]. Copyright 2021, Advanced Functional Materials (Color figure online) …”

Recent Advances in Carbon Material‐Based Multifunctional Sensors and Their Applications in Electronic Skin Systems

“…The emerging memory devices that can provide programmable information recording by switching adjustable resistance under external stimuli, such as memristors, [261][262][263][264] have promising applications in data storage, logic circuits, and artificial synapses. Especially in the current More-than-Moore era, it is vitally important to implement multi-modal storage within a single memory device.…”