Artificial Tactile Sensing Neuron with Tactile Sensing Ability Based on a Chitosan Memristor

Abstract

Owing to the highly parallel network structure of the biological neural network and its triggered processing mode, tactile sensory neurons can realize the perception of external signals and the functions of perception, memory, and data processing by adjusting the synaptic weight. In this paper, a piezoresistive pressure sensor is combined with a memristor to design an artificial tactile sensory neuron. The polyurethane sponge sensor has excellent sensitivity and can convert physical stimuli into electrical signals, and the chitosan‐based memristor has stable bipolar resistive switching characteristics, allowing further information to be memorized and processed. The neuron can respond to tactile stimuli of different degrees, durations, and frequencies; realize potentiation/depression modulation, paired‐pulse facilitation, and spike‐timing‐dependent plasticity; exhibit spike‐rate‐dependent plasticity; and store and erase tactile information through memistor state switching, which has great application potential in biological sensing systems.

Coexistance of the Negative Photoconductance Effect and Analogue Switching Memory in the CuPc Organic Memristor for Neuromorphic Vision Computing

“…It is worth noting that the CuPc memristor gradually switches from the high resistance state (HRS) to the low resistance state (LRS) when a bias voltage from 0 to 2 V is operated, and a resistance memory window is observed when the bias voltage reverts its sweeping direction from 2.0 to 0 V, as shown in states 1 and 2 of Figure b. The continuous switching that is the so-called analogue switching memory behavior exhibits asymmetrically in the positive and negative voltage region, resulting from the asymmetry of electrodes. − The top inset is an enlargement of the current–voltage curve ranging from −0.3 to 0.3 V and shows a non-pinched capacitance effect, indicating that the capacitance effect as a specific work model in the low-bias-voltage region remained. Figure c exhibits the switching memory behaviors of the prepared memristor under ±3 V voltage sweeping, indicating that this memristor has an obvious rectifying effect at a low voltage ranging from −1 to 1 V, and then enters the analogue switching model.…”