As-doped SnSe single crystals: Ambivalent doping and interaction with intrinsic defects

Šraitrová, Kateřina Čermák; Čı́žek, J.; Holý, V.; Kašparová, J.; Plechäček, T.; Kucek, V.; Navrátil, J.; Krejčová, Anna; Drašar, Č.

doi:10.1103/physrevb.103.085203

Cited by 8 publications

(11 citation statements)

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“…We note that these extreme values of parameters for 0.5 atom % of As sample coincide with the highest concentration of vacancies in SnSe single crystals doped with As. 24 Raman scattering spectra of fabricated Sn 50−x As x Se 50 thin films (measured from 50 cm −1 ) are presented in Figure 3a. The decomposition of the Raman spectra by fitting with six Gaussians is exemplified in Figure 3b.…”

Section: Resultsmentioning

confidence: 99%

“…These findings can be linked with the high concentration of Sn vacancies and divacancies. 24 A large number of vacancies is an important attribute of a "good" phase-change material. 25 Even if the films studied in this work are crystalline, we believe that further increase of the amount of vacancies might be possible, which may lead to the amorphous state.…”

Section: Resultsmentioning

confidence: 99%

“…It has been shown that one of such doping elements could be arsenic, which was recently studied as a dopant for single-crystalline SnSe materials. 24 Importantly, the authors report a profound increase in concentration of tin vacancies and formation of a cluster of divacancies, which is believed to be an essential attribute of effective phase-change memory materials. 25 Moreover, they observed an unprecedented 2-orders-of-magnitude decrease in free carrier concentration induced by As-doping.…”

Section: Introductionmentioning

confidence: 99%

“…25 Moreover, they observed an unprecedented 2-orders-of-magnitude decrease in free carrier concentration induced by As-doping. 24 However, for applications in the field of phase-change memory materials, it is required to fabricate tin selenides in the form of thin films. For Sn−Se thin-film deposition, different techniques have been already studied, such as sputtering, 26 evaporation, 27 spray pyrolysis, 28 atomic layer deposition, 29 molecular beam epitaxy, 19 pulsed laser deposition (PLD), 30 etc.…”

Section: Introductionmentioning

confidence: 99%

“…To influence the formation and concentration of native defects in SnSe (i.e., Sn and/or Se vacancies or Se interstitials), another strategy employing doping with elements of ambivalent nature could be used. It has been shown that one of such doping elements could be arsenic, which was recently studied as a dopant for single-crystalline SnSe materials . Importantly, the authors report a profound increase in concentration of tin vacancies and formation of a cluster of divacancies, which is believed to be an essential attribute of effective phase-change memory materials .…”

Section: Introductionmentioning

confidence: 99%

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Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition

et al. 2021

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Pulsed UV laser deposition was exploited for the preparation of thin Sn50–x As x Se50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50–x As x Se50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of Sn m Se n + clusters with low m and n values were observed.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%