Aspect Ratio Dependent Scalloping Attenuation in Drie and an Application to Low-Loss Fiber-Optical Switches

Mita, Yoshio; Sugiyama, Masaru; Kubota, M.; Marty, Frédéric; Bourouina, Tarik; Shibata, Toshio

doi:10.1109/memsys.2006.1627749

Cited by 26 publications

(24 citation statements)

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“…However, the so‐produced devices and systems are subjected to process‐related variations of the surface qualities and defects in the crystal. Imperfections become manifested as sharp notches related to crystal imperfections in the case of anisotropic etching or as diffuse surface roughness for dry etching by ICP/DRIE (ion‐coupled plasma/deep reactive ion etching) . The occurrence of such defects during the manufacture directly affects the reliability of the devices and must be inhibited.…”

Section: Introductionmentioning

confidence: 99%

“…The influence of manufacturing and process‐induced surface roughness on the mechanical properties and on the nanotribological behavior is part of several studies . Most of these investigations were performed on specimen fabricated by anisotropic etching and were focused on the dependence of surface quality with temperature and concentration of the etchant .…”

Section: Introductionmentioning

confidence: 99%

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Where is the limit? Yield strength improvement in silicon micro‐structures by surface treatments

Schifferle¹,

Bandi

Neels

et al. 2015

Physica Status Solidi (a)

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Imperfections, like surface roughness and defects, introduced by common manufacturing processes are recognized to favor failure of microfabricated components and systems. Up to now only a reduced part of the ideal strength prediction by zero Kelvin quantum mechanical ab initio calculations could be recovered for micrometer‐sized structures manufactured with DRIE. Within the present work the high‐loading fracture behavior of group IV semiconductors is investigated on the basis of specific DRIE‐etched micrometer‐sized single crystal silicon (SCSI) specimens. Aiming an enhancement of the surface quality, the samples are post‐treated using wet etchants, such as KOH and HNA and oxidation processes, such as thermal and hydrogen oxidation. The resistance of the specimens against mechanical loading is assessed by 2‐point bending tests applying a testing procedure which is outstanding due to its simplicity in handling and reproducibility of the measurement results. The experiments are analyzed and evaluated for Young's modulus, fracture and bending strength. Dependent on the particular treatment method, remarkable improvements of fracture strain and stress of up to ϵmax = 5.7% and σmax = 8.8 GPa are realized.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Where is the limit? Yield strength improvement in silicon micro‐structures by surface treatments

Schifferle¹,

Bandi

Neels

et al. 2015

Physica Status Solidi (a)

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“…This surface imperfection can be smoothened by either optimizing the process or using thermal oxidation, followed by buffered oxide etch (BOE), as shown in Fig. 4(c) [66].…”

Section: Resultsmentioning

confidence: 99%

Harvesting and Transferring Vertical Pillar Arrays of Single-Crystal Semiconductor Devices to Arbitrary Substrates

Logeeswaran

Katzenmeyer

Islam

2010

IEEE Trans. Electron Devices

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Abstract-Development of devices that can be fabricated on amorphous substrates using multiple single-crystal semiconductors with different physical, electrical, and optical characteristics is important for highly efficient portable and flexible electronics, optoelectronics, and energy conversion devices. Reducing the use of single-crystal substrates can contribute to low-cost and environmentally benign devices covering a large area. We demonstrate a technique to harvest and transfer vertically aligned single-crystal semiconductor micro-and nanopillars from a singlecrystal substrate to a low-cost carrier substrate while simultaneously preserving the integrity, order, shape, and fidelity of the transferred pillar arrays. The transfer technique facilitates multilayer process integration by exploiting a vertical embossing and lateral fracturing method using a spin-coated polymer layer on a carrier substrate. Electrical contacts are formed using a bilayer of metal and conducting polymer such as gold (Au) and polyaniline (PAni). In this method, the original single-crystal substrate can be repeatedly used for generating more devices and is minimally consumed, whereas in conventional fabrication methods, the substrate is employed solely as a mechanical support. This heterogeneous integration technique potentially offers devices with low physical fill factor contributing to lower leakage current and noise, reduced parasitic capacitance, and enhanced photon-semiconductor interactions, and enables heterogeneous multimaterial integration such as silicon with compound semiconductors for rapidly expanding large-scale applications, including low-cost and flexible electronics, displays, tactile sensors, and energy conversion systems.Index Terms-Compound semiconductors, heterogeneous material integration, integrated multifunctional devices, micro/ nano-pillars, photon traps, vertical device arrays, 3-D material integration.

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“…The etch rate depends on the amount of fluorine radicals in the plasma, which is determined by the SF 6 -flow and ICP-power. The scallop-ratio in silicon is generally 0.3 and decreases with trench aspect-ratio [91,92]. However, the scallop formation in ML structures is quite different to that in silicon as can be seen in figure 4.8a.…”

Section: Control Of Scallop Formationmentioning

confidence: 92%

Single-order lamellar multilayer gratings

Meer¹

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Cover: 3D artist impression of a Lamellar Multilayer Grating (LMG). A Transmission Electron Microscope image of an actual LMG is shown on the rear. The grating was etched into a 400 bi-layer W/Si multilayer mirror with a total stack height H of 1 μm and a tungsten layer thickness of only 3 atoms. The grating had a period D of 300 nm and a lamel width ΓD of 75 nm. In comparison to the TEM image on the rear, the red and green layers in the artist impression correspond to tungsten and silicon, respectively. The bi-layer period in the artist impression is overestimated by a factor of 10 for visibility. SummaryA major challenge in the soft x-ray (SXR) and eXtreme UltraViolet (XUV) spectral ranges is the ability to manipulate the incident radiation using optical elements. By patterning conventional multilayer mirrors with nanoscale structures, novel optical elements with a variety of optical properties can be obtained. In this work, the design, fabrication and characterization of Lamellar Multilayer Gratings (LMG) was investigated. Such LMGs are a particular form of the general class of Bragg-Fresnel optics which combine Fresnel optics with Bragg reflection to provide unique dispersive and focusing optics. In particular, LMGs can be used to improve the spectral resolution of x-ray fluorescence techniques.A Coupled Waves Approach (CWA) was derived to simulate the optical performance, in terms of resolution and reflectivity, of LMGs. This CWA allowed to study the physical principles behind LMGs and resulted in the identification of an optimal LMG operating regime. In this regime, the incident beam is reflected in a single diffraction order and is hence referred to as the singleorder regime. Such single-order LMGs were fabricated using UV-NanoImprint Lithography and Bosch Deep Reactive Ion Etching, a process chosen to enable rapid practical development. Single-order operation was experimentally demonstrated and showed an improvement in spectral resolution of a factor of 3.8 with regard to conventional multilayer mirrors. Singe-order excitation of higher diffraction orders was also measured and analyzed.Single-order operation often requires multilayer stacks and grating structures that cannot be fabricated with sufficient accuracy using current technologies. As this invalidates the semi-infinite multilayer approximation, we investigated the optical performance of LMGs with finite multilayer stacks. We determined the ratio between the absorber thickness and bi-layer period of the multilayer stack can be used to further tailor LMG optical performance to maximize bandwidth reduction or minimize peak reflectivity loss. We also investigated various degradation processes that could limit the lifetime of LMGs, which is important for the applicability of such elements. Oxidation of tungsten and silicon as well as changes to the sidewall composition were clearly seen. However, SXR reflectivity remained stable to within measurement accuracy for an extended storage period of 18 months in a 1 atm air environment. The possibility of ...

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Aspect Ratio Dependent Scalloping Attenuation in Drie and an Application to Low-Loss Fiber-Optical Switches

Cited by 26 publications

References 1 publication

Where is the limit? Yield strength improvement in silicon micro‐structures by surface treatments

Where is the limit? Yield strength improvement in silicon micro‐structures by surface treatments

Harvesting and Transferring Vertical Pillar Arrays of Single-Crystal Semiconductor Devices to Arbitrary Substrates

Single-order lamellar multilayer gratings

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