Particle removal from the surface of a substrate has
been an issue
in numerous fields for a long time. In semiconductor processes, for
instance, the formation of clean surfaces by removing photoresist
(PR) must be followed in order to create neat patterns. Although PR
removal has been intensively investigated recently, little is known
about how ultraviolet (UV) and developer solutions alter the PR resin
(and in what manner) near the surface. While varying the exposure
times of UV and developer solution, we investigated the topographic
changes on the surfaces of PR resin films and particles. The measured
surface properties were then correlated with the detachment force
determined using films, and eventually with the residual PR particle
removal percentages obtained in a microchannel. Using a positive PR
and a base developer solution, we demonstrated that UV causes the
surface of PR resin to become hydrophilic and wavy, whereas the developer
solution produces a surface with a larger degree of roughness by swelling
and partially dissolving the resin. Ultimately, the increased roughness
decreased the effective contact area between PR resins, hence decreasing
the detachment force and increasing the particle removal percentages.
We anticipate that our findings will help understand residual particle
issues, particularly on the removal mechanism of PR resins based on
surface topography.