2D materials have shown great potential for high-performance electronic devices, thanks to their dangling-bond-free surface and atomic thickness which bring merits of high carrier mobility, efficient channel current regulation, and higher degree of vertical integration. [1][2][3][4][5] Many 2D semiconducting materials have shown outstanding phototransistor performance, such as MoS 2 , [6][7][8] WSe 2 , [9,10] GaTe, [11,12] and SnSe 2 , [13][14][15] because of their suitable energy bandgap and high mobility.