Assembly and packaging technologies for high-temperature SiC sensors

Zeiser, R.; Wagner, Phillip; Wilde, Juergen

doi:10.1109/ectc.2012.6248852

Cited by 12 publications

(10 citation statements)

References 11 publications

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“…Figure 5 depicts the FE-model of a flip-chip device. For the stress-free temperature T ref , an important input parameter of the simulation, we inserted the glass transition temperature T g of 550 °C for the utilized borosilicate glass, which we characterized with a thermalmechanical-analysis (TMA) in preliminary studies [3]. …”

Section: Finite-element-methodsmentioning

confidence: 99%

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Low stress flip-chip package for pressure sensors operating at 500 °C

Zeiser

Ayub

Wagner

et al. 2015

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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This work presents a method for a reliable assembly and interconnection of MEMS for very high temperatures. A flip-chip concept for resistive micromechanical pressure sensors with a platinum thin film was developed and sensorassemblies were fabricated. The investigated metallized ceramic substrates were AlN, Si 3 N 4 , a Low-Temperature-Cofired-Ceramic (LTCC) and a zirconia-silicate (ZrSiO 4 ). A borosilicate glass-solder was the die-attachment material and gold stud-bumps were the interconnection. The thermalmechanical stresses in the sensors, induced by the packaging process due to material-dependent mismatches were analyzed with FEM and optical deformation measurements from 20 to 500 °C. The comparison of the obtained experimental and FE-results revealed a strong influence of the applied substrate on the thermal-mechanical stresses in the chip-membrane which is affecting the output-signal and reliability. Both methods were in good accordance. The two specific silicon-matched ceramic substrates LTCC and ZrSiO 4 reduced the stresses in the sensor-element significantly. Furthermore, the electrical characterization of assembled test-sensors revealed a correlation between the package-induced stresses in the chip-membrane and the shift of the sensor-signal after the assembly-process.

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Section: Finite-element-methodsmentioning

confidence: 99%

“…Several approaches for packaging technologies, specifically designed for harsh environments have been published [3]. The majority of the transducers showed large signal drifts and high offset voltages during and after operation.…”

Section: Introduction Motivationmentioning

confidence: 99%

Low stress flip-chip package for pressure sensors operating at 500 °C

Zeiser

Ayub

Wagner

et al. 2015

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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“…Design method -stress Due to the differences in the CTE of the substrate, chip and mounting material, the stresses developed in the assembly leads to deformation of the package The theoretical formula to calculate stress is given in Equation 1 [6]. Equation 1: Thermal stress inside a Chip, induced by the packaging process, with geometric factor C [6] Tab. 2: Experiemental results of die attach methods [1] [2] (1)…”

Section: Die Attachment Materialsmentioning

confidence: 99%

P1.6 - New Materials, Processes and design Methods for the Chip Mounting of High-Temperature Sensors

Feißt¹,

Subbiah²,

Zeiser³

et al. 2017

Proceedings Sensor 2017

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“…In recent years, to expand the application of sensors, researchers have studied the interconnection of leads and pads. For example: Pt wire/Pt thin film [ 11 , 12 , 13 , 14 ], Pd wire/Pt thin film [ 12 , 15 ], Pt wire/PtIr pad [ 16 ], etc. However, the physical properties of the materials studied are not much different and the joint formation during the bonding process is not clear.…”

Section: Introductionmentioning

confidence: 99%

“…With the rapid development of technology, higher requirements are placed on the high-temperature resistance and support of electrode leads; to this end, platinum-tungsten alloys have become a new application direction. PtW8 wire has higher strength, stiffness, and high-temperature resistance than Pt wire, and is the most promising electrode material, as shown in Table 1 [ 15 ]. To expand the application requirements of thermal gas sensors, the PtW8 wire should be bonded onto the Au thick film.…”

Section: Introductionmentioning

confidence: 99%

A Connection Method between Ultrahard PtW8 Wire and a Au Thick Film Based on Parallel-Gap Resistance Microwelding

Pan

Liu

2020

Materials

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To meet the application requirements of a thermal gas sensor, it is necessary to realize a bond connection between PtW8 wire with a Au thick film. However, the physical properties, such as the melting point and hardness, of the two materials differ greatly. In this study, the parallel-gap resistance microwelding was introduced into the bonding connection between PtW8 wire and a Au thick film in the thermal gas sensor. The feasibility of the method was analyzed theoretically and the experimental system was established and studied. A scanning electron microscope (SEM) was used to analyze the morphology of the cross-section of the welded joint. The results showed that there was no obvious transition layer at the interface region but there were relatively dense welds. At the same time, it was found that the melted Au wetted and climbed on the surface of the platinum-tungsten alloy, which may have been the key to forming the joint. Elements were observed to have a spatial distribution gradient within the cross-section of the welding line, revealing that mutual diffusion occurred in the parallel-gap resistance microwelding, where this diffusion behavior may be the basic condition for forming the joint. Finally, the influence of the welding voltage, time, and force on the joint strength was also studied, where the joint strength could be up to 5 cN.

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Assembly and packaging technologies for high-temperature SiC sensors

Cited by 12 publications

References 11 publications

Low stress flip-chip package for pressure sensors operating at 500 °C

Low stress flip-chip package for pressure sensors operating at 500 °C

P1.6 - New Materials, Processes and design Methods for the Chip Mounting of High-Temperature Sensors

A Connection Method between Ultrahard PtW8 Wire and a Au Thick Film Based on Parallel-Gap Resistance Microwelding

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Assembly and packaging technologies for high-temperature SiC sensors

Cited by 12 publications

References 11 publications

Low stress flip-chip package for pressure sensors operating at 500 &#x00B0;C

Low stress flip-chip package for pressure sensors operating at 500 &#x00B0;C

P1.6 - New Materials, Processes and design Methods for the Chip Mounting of High-Temperature Sensors

A Connection Method between Ultrahard PtW8 Wire and a Au Thick Film Based on Parallel-Gap Resistance Microwelding

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Low stress flip-chip package for pressure sensors operating at 500 °C

Low stress flip-chip package for pressure sensors operating at 500 °C