Assembly of efficient Ag/n-Si/Cu₂CdSnS₄/Au for photovoltaic cell utilities

Abstract

The assembly of earth-abundant and low-cost kieserite thin films is important to produce inexpensive solar cells. Here, uniform, crystalline CCSS (CCTS) (Cu2CdSnS4) thin films (tf) were prepared atop of well wiped cut-glass substrate through chemical spray pyrolysis performance with different thickness at 450 oC. 
 The structural characteristics of the CCSS tf have been premeditated by the X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and EDAX analysis. The difference values of the structural constants of CCSS films were examined with the film thickness. The optical observations point that the CCSS films show a direct allowed optical transition and decreased when thickness of the film increased. The opto electrical characterizations such as photosensitive carrier concentration, the optical mobility or resistivity, and relaxation time of the CCSS films were determined. The thickness 385 nm of the CCSS tf was elected to be exhausted in fabricate of the Ag/ n-Si/ CCSS/ Au hetero junction because they have highest magnitudes of absorption coefficient and optical conductivity. The hypothetical CCSS/ n-type Si hetero junction had conversion efficiency (CO) of 1.54 %.