Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

Abstract

The forward Schottky characteristic method, utilizing the temperature dependence of forward gatesource Schottky junction voltage, has been used to measure the transient temperature rise under DC and cycle pulse for multi-finger AlGaN/GaN high electron mobility transistor. The effect of electrical pulse on channel temperature has been studied. The transient temperature rise of channel under pulses with different duty cycles and frequencies are determined, respectively. The measurement results show that operation under high frequency and/or low duty cycle can improve the lifetime and performance reliability of AlGaN/GaN HEMT devices effectively. Furthermore, the measurement results are found to be consistent with the electro-thermal simulation results performed for the device. V C 2013 AIP Publishing LLC. [http://dx.

Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy

“…This method has been validated in the literature [7,8]. We have previously presented our selection of the physical models in detail [8,18]. Table 1 lists the parameters of the material used in the transient temperature simulations.…”

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

“…Due to its military value, the study of HPM effects has also become a hot spot in recent decades. Y. M. Zhang et al studied the thermal characteristics of the GaN HEMT device under the electrical pulse of different duty cycles and frequency and found that low duty cycle and high-frequency operation are beneficial in improving lifetime and performance reliability [20,21]. Y. Q. Liu et al found that HPM can cause the non-linear response of HEMT, and the research results show that the cause of this phenomenon is tunneling and impact ionization [8].…”