“…For implementation at the hardware level, various types of neuromorphic devices, such as two-terminal devices [ 6 ] and 3T devices, have been proposed as potential foundational components for synaptic bionics and applications in neuromorphic engineering, including phase change memory (PCM), resistive random access memory (RRAM) [ 13 , 14 , 15 , 16 , 17 ], magnetoresistive access memory (MRAM) [ 18 ], and so on, while 3T devices include floating-gate transistor devices [ 19 , 20 ], ferroelectric field effect transistors (FeFETs) [ 21 ], electrolyte-gated transistors (EGTs) [ 22 , 23 , 24 , 25 , 26 , 27 , 28 ], and hydrogel-gated field effect transistors (HGFETs) [ 29 , 30 , 31 , 32 ]. Due to the physical separation of the pre- and postsynaptic terminal, the 3T device is the best choice to simulate various neural activities, such as short-term plasticity (STP) and long-term plasticity (LTP), excitatory postsynaptic current (EPSC), and spike-timing dependent plasticity (STDP) [ 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 ]. Hydrogel-gated field-effect transistors (HGFETs), among the diverse array of 3T devices, have been explored for widespread practical application in bioelectronics owing to their resemblance to biological synapses [ 12 , 29 ].…”