Assessment of thermal network models for estimating IGBT junction temperature of a buck converter

Alavi, Omid; Abdollah, Mohammad; Viki, Abbas Hooshmand

doi:10.1109/pedstc.2017.7910398

Cited by 40 publications

(10 citation statements)

References 10 publications

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“…However, the heat transfer physics dictates that the total capacity in the thermal domain is the summation of all capacity. Hence, the electrical equivalent of the thermal network is a circuit with capacitance connected in parallel i.e., the grounded capacitor ladder network explained by Omid Alavi (10). In contrast, the Foster circuit doesn't include the layer sequence.…”

Section: Introductionmentioning

confidence: 99%

In-situ reliability monitoring of power packages using a Thermal Test Chip

Martin

Sattari

Smits

et al. 2022

2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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With an increasing demand for high-power electronics, the need to meet stringent automotive norms and better understand the critical failure mechanisms are crucial in order to improve their reliablity. To that end, we developed an in-situ reliability monitoring setup capable of actively measuring the thermal performance of the package during lifetime testing. A Thermal Test Chip (TTC) assembled into a Power Quad Flat No-lead (PQFN) package was employed as a test vehicle for non-destructive reliability assessment. The TTC comprises resistive heaters as a heat source and resistive temperature elements for measuring the thermal response. The transient thermal behavior was evaluated based on the contribution of heat source to a temperature field, and the temperature distribution was measured at multiple spatial positions. The experimental results provide insights into the thermal properties' influence on the thermal behavior of the package. A compact electro-thermal model based on analogies was developed to deconvolute and analyze the transient thermal measurements. The results of the compact model correlate with the experimental measurements, and the model's accuracy was verified using finite element simulations. The development of such thermal characterization experiments and computationally inexpensive models assist in further understanding the impact of failures in advancing high-power density electronics.

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Section: Introductionmentioning

confidence: 99%

In-situ reliability monitoring of power packages using a Thermal Test Chip

Martin

Sattari

Smits

et al. 2022

2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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show abstract

“…Directly coupling the electrical circuit analysis with three-dimensional (3D) transient computational fluid dynamics (CFD) thermal analysis to calculate the ET coupled behavior presents a great computational challenge because of limitations on storage space and computational power. In the literature, the problem has been successfully eased using resistance–capacitance (RC) thermal networks [ 20 , 21 , 22 ], such as Foster and Cauer networks, instead of directly carrying out the CFD thermal analysis. RC thermal networks can be an effective and favorable means for junction temperature estimation due to their unparalleled computational efficiency and flexibility for both thermal and electrical models [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

“…In the literature, the problem has been successfully eased using resistance–capacitance (RC) thermal networks [ 20 , 21 , 22 ], such as Foster and Cauer networks, instead of directly carrying out the CFD thermal analysis. RC thermal networks can be an effective and favorable means for junction temperature estimation due to their unparalleled computational efficiency and flexibility for both thermal and electrical models [ 22 ]. A direct coupling of the detailed circuit simulation model and an RC thermal network model forms the so-called standard ET coupling analysis (ETCA) approach [ 23 , 24 , 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles

2021

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This study introduces an effective and efficient dynamic electro-thermal coupling analysis (ETCA) approach to explore the electro-thermal behavior of a three-phase power metal–oxide–semiconductor field-effect transistor (MOSFET) inverter for brushless direct current motor drive under natural and forced convection during a six-step operation. This coupling analysis integrates three-dimensional electromagnetic simulation for parasitic parameter extraction, simplified equivalent circuit simulation for power loss calculation, and a compact Foster thermal network model for junction temperature prediction, constructed through parametric transient computational fluid dynamics (CFD) thermal analysis. In the proposed ETCA approach, the interactions between the junction temperature and the power losses (conduction and switching losses) and between the parasitics and the switching transients and power losses are all accounted for. The proposed Foster thermal network model and ETCA approach are validated with the CFD thermal analysis and the standard ETCA approach, respectively. The analysis results demonstrate how the proposed models can be used as an effective and efficient means of analysis to characterize the system-level electro-thermal performance of a three-phase bridge inverter.

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“…In order to extract Tvj thermal-electric models can be employed in power electronics converters estimating Tvj from a temperature sensor adhered to the baseplate/heatsink [5]. It is well known that the estimated error of Tvj becomes smaller when using a more detailed and therefore complex model [6,7] to the expense of required computational resources.…”

Section: Introductionmentioning

confidence: 99%

Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating

Mandeya

Chen

Pickert

et al. 2018

IEEE Trans. Power Electron.

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Temperature Sensitive Electrical Parameters (TSEPs) are promising for measurement of the IGBT junction temperature. Many TSEPs have been proposed in the literature and most require current sensors, and convoluted hardware and data processing, which are associated with increased complexity and cost. In this letter, a new TSEP is proposed called pre-threshold TSEP, VGE(pre-th). VGE(pre-th) requires only a voltage sensor and a counter. Besides less hardware requirement, VGE(pre-th) does not suffer from self-heating -a problem that most TSEPs encounter. This letter presents the operation of VGE(pre-th) with the help of simulation. Experimental tests on a 3.3kV, 800A IGBT were conducted to characterize VGE(pre-th). It is shown that the new TSEP proposed has a sensitivity of -2.2mV/°C.

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Assessment of thermal network models for estimating IGBT junction temperature of a buck converter

Cited by 40 publications

References 10 publications

In-situ reliability monitoring of power packages using a Thermal Test Chip

In-situ reliability monitoring of power packages using a Thermal Test Chip

Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles

Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating

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