Assessment of uni-axial mechanical stress on Trench IGBT under severe operating conditions: a 2D physically-based simulation approach

Belmehdi, Yassine; Azzopardi, Stéphane; Delétage, Jean-Yves; Woirgard, Eric

doi:10.1109/ecce.2009.5316371

Cited by 7 publications

(5 citation statements)

References 9 publications

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“…The effect of stress induced by packaging thermal expansion has been observed in experiment in [127] and in simulation in [128]. The experimental results in [127] have shown that the ON-state I-V curves of IGBTs depend on the applied stress (up to 400 MPa, both compressive and tensile), with about 10% change in ON-state voltage arising from a lateral (shear) stress on the device chip.…”

Section: ) Electrical Stress Effectsmentioning

confidence: 88%

“…The experimental results in [127] have shown that the ON-state I-V curves of IGBTs depend on the applied stress (up to 400 MPa, both compressive and tensile), with about 10% change in ON-state voltage arising from a lateral (shear) stress on the device chip. The simulation results in [128] show that the electron mobility is the principal cause of lateral stress dependence of the IGBT electrical properties.…”

Section: ) Electrical Stress Effectsmentioning

confidence: 97%

See 1 more Smart Citation

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

1,013

348

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Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

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Section: ) Electrical Stress Effectsmentioning

confidence: 88%

Section: ) Electrical Stress Effectsmentioning

confidence: 97%

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

1,013

348

View full text Add to dashboard Cite

show abstract

“…For the mechanical approach, the four point bending method is used to study the effect of mechanical stress on the electrical behavior of a semiconductor device [10], [11], [15].…”

Section: Four Point Bending Techniquementioning

confidence: 99%

“…Regarding power electronics devices, the literature is very poor. Few studies have been carried out on IGBT showing the impact of the mechanical stress on the device behavior [9], [10], [11]. However, the two first studies have considered a soldered silicon die on substrate and in such configuration, the silicon chip is already mechanically stressed whereas in [11], only the simulation approach has been used for severe switching configurations.…”

Section: Introductionmentioning

confidence: 99%

Electromechanical characterization of “flying” Planar Gate Punch Through IGBT bare die

Belmehdi

Azzopardi

Delétage

et al. 2010

2010 IEEE Energy Conversion Congress and Exposition

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The effect of mechanical stress on the power dice is investigated by considering the application of mechanical stress on a Punch Through Planar Insulated Gate Bipolar Transistor under static electrical characterizations. Specific test vehicles and test bench for applying a tensile or compressive mechanical stress are described in detail. Furthermore, 2D finite element simulations are carried out to understand the device behavior by internal physics analysis. The impact of the mechanical stress cannot be neglected. Indeed, the results show a similar tendency between simulations and experiments for two static electrical characterizations: the output characteristics are sensitive to mechanical stress whereas the effect is negligible on the breakdown voltage. The case of the threshold voltage shows a disparity between experiments and simulations. Globally, such silicon property might be a key point to propose a real-time monitoring of the mechanical state evolution of the power assemblies. Index Terms-IGBT, mechanical stress, flying bare dice, 2D finite elements simulation, experiments, static characterization.

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“…The literature shows that the mechanical stress also has an impact on the silicone device behavior [2][3][4][5]. However, in [2,3] IGBT silicone dice used were soldered on a substrate, which means that the dice are already stressed by the solder process.…”

Section: Introductionmentioning

confidence: 99%

Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature

Belmehdi

Azzopardi

Delétage

et al. 2010

Microelectronics Reliability

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a b s t r a c tSilicon dice soldered in power assemblies have to withstand simultaneously electrical, thermal and mechanical stress. Mechanical stress is an important issue because it will directly impact on both the device behavior and power modules reliability. This paper focuses on the electro-mechanical static characterization of a planar gate IGBT by the help of experiments at controlled temperatures. A specific test bench is proposed to make the experiments on silicone bare dice. It can be highlighted that mechanical stresses have a strong influence on the electrical characteristics of IGBT and this effect is independent from the die temperature. These properties might be a key point to point out an early failure indicator to improve design of the power module.

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Assessment of uni-axial mechanical stress on Trench IGBT under severe operating conditions: a 2D physically-based simulation approach

Cited by 7 publications

References 9 publications

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Electromechanical characterization of “flying” Planar Gate Punch Through IGBT bare die

Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature

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