Abstract:As the technology scales down to the deep submicron domain, the leakage energy in memory devices could contribute to a significant portion of the total energy consumption. Therefore, evaluation of energy consumption including the leakage energy is necessary. In this paper, we investigate the effectiveness of scratch-pad memory on energy reduction considering both the dynamic and leakage energy. The experiments are performed for 65 nm, 45 nm, and 32 nm technologies. The results demonstrate the effectiveness of scratch-pad memory in deep submicron technology. It is also observed that the leakage energy becomes less significant along with the technology scaling.