Assignment of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>E</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Transitions in II-IV-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">V</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Chalcopyrite Crystals

Shay, J. L.

doi:10.1103/physrevlett.29.1008

Cited by 13 publications

(3 citation statements)

References 9 publications

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“…They provide valuable information on the electronic band structure of the material, which has an optical spectrum more complex than those of the III-V compounds. 7 In this work, we report room-temperature pseudodielectric function ͗⑀͘ for CuIn(S x Se 1Ϫx ) 2 alloys for energies ranging from 1.5 to 5.5 eV and for compositions xϭ0, 0.09, 0.5, 0.6, 0.72, and 1. Our results yield information about the composition dependence of various parameters, such as the critical-point energies.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of the quaternary alloy system Culn(SxSe1−x)2 investigated by spectroscopic ellipsometry

Zeaiter

Llinarès

1999

Journal of Applied Physics

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Experimental results for the pseudodielectric function ͗⑀͘ of CuIn(S x Se 1Ϫx ) 2 alloy system are reported. The investigation has been performed on the full composition range using crystals cut from ingots of 10 mm diameter and 40 mm length. The ingots were grown using the classical Bridgman method. Ellipsometric measurements were performed at room temperature in the range 1.5-5.5 eV. The energies of critical points have been determined from the imaginary part of the dielectric function. The transition energies ͑E 1 , E 2 , E 3 , and E 4 ͒ are found to shift linearly to higher energies as the sulfur content increases. The copper d level is found to be dominant in the ranges 2.5-3.5 eV for CuInSe 2 and 2.8-4 eV for CuInS 2 .

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Section: Introductionmentioning

confidence: 99%

Optical properties of the quaternary alloy system Culn(SxSe1−x)2 investigated by spectroscopic ellipsometry

Zeaiter

Llinarès

1999

Journal of Applied Physics

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“…Due to the large broadening of the transitions it was not possible to separate A and B. The higher energy structures El and E3,4 are related to transitions in the region of the chalcopyrite Brillouin zone, which maps to the A-direction in zincblende [9].…”

Section: Resultsmentioning

confidence: 99%

Crystal growth and characterization of ZnGe(As, P)2

Schön

Angelov

Goldhahn

1995

Phys. Stat. Sol. (a)

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Crystal Growth and Characterization of ZnGe(As, P)2 S. SCHON (a), M. ANGELOV (b), and R. GOLDHAHN (b) The growth of ZnGe(As,P, -J2 crystals is studied by direct solidification from a stoichiometric melt. Optimum growth conditions with respect to the single phase and the crystal quality of the samples are found. Using a temperature gradient of 4 K/cm and a cooling rate of 2 K/h large single-crystalline areas of 3 x 4 mm2 are obtained. Investigations by X-ray powder diffraction revealed a chalcopyrite-type lattice for the quaternary compound. Additional phases are not detected. Closer examination by energy dispersive X-ray microprobe analysis yields the exact composition of the element concentrations. In regard to the arsenic and phosphorus contents electrolyte electroreflectance spectroscopy is used to determine the energies of the fundamental optical transitions. The analysis shows an approximately linear increase of the direct band gap with decreasing composition parameter x. Die Synthese von ZnGe(As,P, -,),-Kristallen durch langsame Abkiihlung aus der Schmelze wird untersucht. Es werden optimale Wachstumsbedingungen im Hinblick auf die Phasenreinheit und kristalline Beschaffenheit der Proben gefunden. Ein Temperaturgradient von 4 K/cm und eine Abkiihlrate von 2 K/h ergeben grol3e einkristalline Bereiche von 3 x 4 mm'. Rontgendiffraktometrie-Messungen zeigen, daR die quaternare Verbindung eine Chalkopyrit-Kristallstruktur besitzt. Zusatzliche Phasen werden nicht beobachtet. Die genaue Bestimmung der Materialzusammensetzung erfolgt durch Elektronenstrahl-Mikroanalyse. Mittels elektrolytischer Elektroreflexion werden die Energien der optischen Ubergange im Bereich der Bandliicke in Abhangigkeit von den As-und P-Konzentrationen bestimmt. Die Ergebnisse zeigen mit abnehmenden x-Gehalt eine nahezu lineare Verschiebung der Bandliicke in Richtung hoherer Energien.

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“…The El and El + A1 peaks in sphalerite materials arise from transitions along the (111) direction of the Brillouin zone. Shay [21] has suggested that these two transitions give rise to four transitions along the F (x, x, 2x) line corresponding to the A line of the sphalerite structure. However, the F, + F, doublets (R, + R, in the notation of [20 and 211) corresponding to the upper valence bands and the lower conduction bands are quasi-degenerate in our calculation (the splitting of the F, + F, doublets is about 0.01 eV and this value is the accuracy of our calculations).…”

Section: Higher Energy Regionmentioning

confidence: 98%

Energy Band Structure Calculation of CdGeAs₂ by Pseudopotential Method with Spin–Orbit Interaction

Madelon¹,

Paumier²,

Hairie³

1991

Physica Status Solidi (b)

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The electronic energy bands of CdGeAs, are calculated at symmetry points and along symmetry directions of the Brillouin zone, using the empirical pseudopotential method and taking into account the spin-orbit interaction. The introduction of the spin-orbit interaction improves the correspondence between calculated and measured values of transition energies. The symmetry properties of the wave function are determined with and without spin-orbit interaction: this study confirms the level order and the transition polarization dependence of levels, in particular around the gap which is a direct one.Nous avons calcule la structure de bande de CdGeAs, aux points et le long des directions de symetrie de la zone de Brillouin a l'aide de la mtthode du pseudopotentiel empirique et en tenant compte de l'interaction spin orbite. L'introduction de l'interaction spin orbite ameliore l'accord des resultats du calcul avec la determination exptrimentale de l'tnergie des transitions tlectroniques. L'etude des proprietts de symttrie de la fonction d'onde avec et sans interaction spin orbite confirme l'ordre des niveaux et permet de trouver les polarisations des transitions, en particulier autour du gap qui est direct.

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Assignment ofE1Transitions in II-IV-V2Chalcopyrite Crystals

Cited by 13 publications

References 9 publications

Optical properties of the quaternary alloy system Culn(SxSe1−x)2 investigated by spectroscopic ellipsometry

Optical properties of the quaternary alloy system Culn(SxSe1−x)2 investigated by spectroscopic ellipsometry

Crystal growth and characterization of ZnGe(As, P)2

Energy Band Structure Calculation of CdGeAs₂ by Pseudopotential Method with Spin–Orbit Interaction

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Assignment ofE1Transitions in II-IV-V2Chalcopyrite Crystals

Cited by 13 publications

References 9 publications

Optical properties of the quaternary alloy system Culn(SxSe1−x)2 investigated by spectroscopic ellipsometry

Optical properties of the quaternary alloy system Culn(SxSe1−x)2 investigated by spectroscopic ellipsometry

Crystal growth and characterization of ZnGe(As, P)2

Energy Band Structure Calculation of CdGeAs2 by Pseudopotential Method with Spin–Orbit Interaction

Contact Info

Product

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Energy Band Structure Calculation of CdGeAs₂ by Pseudopotential Method with Spin–Orbit Interaction