J. Phys. Chem. C
 2024
DOI: 10.1021/acs.jpcc.4c01323
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Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High-k Dielectric Sb2O3 and 2D Semiconductor MoS2

Qin Liu,
Yang Zuo,
Jingyu He
et al.
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