Asymmetric Doping‐Dependent Electron Transport Mobility in InxGa1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure
Sangita R. Panda,
Manoranjan Pradhan,
Sandipan Mallik
et al.
Abstract:We analyze the asymmetric doping‐dependent electron mobility μ of GaAs/InGaAs/GaAs quantum well field‐effect transistor (QWFET) structure. We consider doping concentrations, nd1 and nd2, in the substrate and surface barriers, respectively, and study μ as a function of nd2, taking (nd1 + nd2) unchanged. An increase in nd2 decreases nd1, yielding interesting changes in the occupation of subbands. For well width W < 164 Å, μ is due to single subband occupancy (SSO). Around W = 164 Å, there occurs first SSO, th… Show more
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