Asymmetric Melting and Freezing Kinetics in Silicon

Tsao, J. Y.; Aziz, Michael J.; Thompson, Michael O.; Peercy, P. S.

doi:10.1103/physrevlett.56.2712

Cited by 81 publications

(30 citation statements)

References 12 publications

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“…The melting front is found to be faster than the solidification interface in agreement with the idea that disordering is an easier task than ordering. Our results confirm the majority of experimental and numerical studies [14,[22][23][24][25]. We also confirm the conclusions of a debate between Richards [26] and Oxtoby and co-workers [27,28] on the importance of density change on the asymmetry between melting and solidification kinetics.…”

Section: Asymmetry Between Melting and Solidificationsupporting

confidence: 90%

Measuring kinetic coefficients by molecular dynamics simulation of zone melting

Celestini

Debierre

2002

Phys. Rev. E

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Molecular dynamics simulations are performed to measure the kinetic coefficient at the solid-liquid interface in pure gold. Results are obtained for the (111), (100) and (110) orientations. Both Au(100) and Au(110) are in reasonable agreement with the law proposed for collision-limited growth. For Au(111), stacking fault domains form, as first reported by Burke, Broughton and Gilmer [J. Chem. Phys. 89, 1030(1988]. The consequence on the kinetics of this interface is dramatic: the measured kinetic coefficient is three times smaller than that predicted by collision-limited growth. Finally, crystallization and melting are found to be always asymmetrical but here again the effect is much more pronounced for the (111) orientation.

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Section: Asymmetry Between Melting and Solidificationsupporting

confidence: 90%

Measuring kinetic coefficients by molecular dynamics simulation of zone melting

Celestini

Debierre

2002

Phys. Rev. E

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“…Lett. 110, 211602 (2017); doi: http://dx.doi.org/10.1063/1.4984110 2 laser pulse duration, wavelength and number of irradiation pulses, as well as film thickness and choice of substrate in the case of thin Si films [5][6][7][8][9][10] . Despite this early discovery, most laser-induced phase-change studies in Si focused on transforming large areas, for instance laser-annealing of amorphous Si for fabrication of solar cells 11,12 or OLED displays 13 .…”

Section: Textmentioning

confidence: 99%

Fabrication of amorphous micro-ring arrays in crystalline silicon using ultrashort laser pulses

Fuentes‐Edfuf

García-Lechuga

Puerto

et al. 2017

Applied Physics Letters

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Abstract:We demonstrate a simple way to fabricate amorphous micro-rings in crystalline silicon using direct laser writing. The method is based on the fact that the phase of a thin surface layer can be changed into the amorphous phase by irradiation with a few ultrashort laser pulses (800 nm wavelength and 100 fs duration). Surface-depressed amorphous rings with a central crystalline disk can be fabricated without the need for beam shaping, featuring attractive optical, topographical, and electrical properties. The underlying formation mechanism and phase change path way have been investigated by means of fs-resolved microscopy, identifying fluence-dependent melting and solidification dynamics of the material as the responsible mechanism. We demonstrate that the lateral dimensions of the rings can be scaled and that the rings can be stitched together, forming extended arrays of structures not limited to annular shapes. This technique and the resulting structures may find applications in a variety of fields in optics, nanoelectronics, and mechatronics. Text:Silicon is more than just a key material for the electronics industry; it can be considered one of the pillars the industry is built on. Si owes this position essentially to its abundance on earth, its semiconducting properties and the existence of two structurally different solid phases (crystalline and amorphous), having very different physical properties. In this context it is worth noting that the amorphous phase can be formed by a variety of methods, including chemical and physical vapour deposition techniques, ion implantation and melting followed by rapid quenching. While some of the properties of the amorphous phase are known to depend on the preparation method 1 it has to be kept in mind that it is still a tetrahedrally coordinated semiconductor with a coordination number close to four 2 , just as the crystalline phase.Laser processing of Si started immediately after sufficiently intense lasers were available 3 and today applications are countless. The ability of pulsed laser irradiation to melt the crystalline material and induce resolidification either into the crystalline or amorphous phase, depending on the irradiation conditions, has been observed already in 1979 by Liu et al 4 . In fact, the authors proposed this concept for data storage applications due to the optical contrast between the two phases. Several experimental parameters influence the melting and freezing kinetics of the material and thus the final phase obtained, the most important ones being the Appl. Phys. Lett. 110, 211602 (2017); doi: http://dx.doi.org/10.1063/1.4984110 2 laser pulse duration, wavelength and number of irradiation pulses, as well as film thickness and choice of substrate in the case of thin Si films [5][6][7][8][9][10] . Despite this early discovery, most laser-induced phase-change studies in Si focused on transforming large areas, for instance laser-annealing of amorphous Si for fabrication of solar cells 11,12 or OLED displays 13 . Less work has been done to imp...

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“…Typically, for Isingbased models to produce solute trapping in the past, an atomic mobility has had to be reduced so drastically that other unintentional departures from reality are manifested. For example, with the parameters in a Monte Carlo simulation adjusted to permit more trapping on (111) than (001) interfaces [25], the interfacial undercoolings were much greater than indicated by experiment [10][11][12][13][14][15][16]. In another example, an analytical model based on similar principles to those of the kinetic Ising model [26,27], with the parameters adjusted to permit trapping of dilute A in B, did not permit trapping of dilute B in A at any speed [5], in conflict with experiments on the SiGe system [5,9].…”

Section: Comparison To Modelsmentioning

confidence: 98%

“…(c) The velocity-undercooling function for pure Si (001) has been measured [10][11][12][13][14][15][16]. Although some of the measurements are more direct than others, in all cases the reported "interface sluggishness" [17], d(∆T ) / d v or, for the cases under consideration, ∆T/v, near the melting point falls in the range 3-18 K/(m/s).…”

Section: What We Need From a Modelmentioning

confidence: 99%

Experimental constraints on nonequilibrium interface kinetic models

Aziz

1997

Materials Science and Engineering: A

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Experimental results relevant to models for nonequilibrium interface kinetics during rapid solidification are reviewed. Models are examined critically in light of these experiments. The kinetic Ising model is shown to compare unfavorably with experiment. The Continuous Growth Model without solute drag and its extension to non-(001) interfaces, the Aperiodic Stepwise Growth Model, account well for all relevant experimental results.

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Asymmetric Melting and Freezing Kinetics in Silicon

Cited by 81 publications

References 12 publications

Measuring kinetic coefficients by molecular dynamics simulation of zone melting

Measuring kinetic coefficients by molecular dynamics simulation of zone melting

Fabrication of amorphous micro-ring arrays in crystalline silicon using ultrashort laser pulses

Experimental constraints on nonequilibrium interface kinetic models

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