Asymmetric Proton-Exchange-Enhanced Lithium Niobate and Silicon Low-Temperature Direct Bonding with an Ultrathin Heterogeneous Interface

Abstract

The integration of lithium niobate (LiNbO 3 or LN) and silicon (Si) has emerged as a promising heterogeneous platform for microelectromechanical systems (MEMSs) and photonic integrated circuits (PICs). Particularly, the lithium niobate on silicon (LNOS) architecture leverages the superior piezooptomechanical properties of LN, making it compatible with superconducting circuits and quantum systems. This opens an avenue for the development of advanced quantum sensors and processors. However, existing LN and Si bonding methods suffer from inherent limitations, such as low interfacial strength and the formation of thick, amorphous interlayers. In this work, we present an asymmetric surface activation strategy to address these challenges. By employing proton-exchange-enhanced chemical activation on the LN surface and oxygen plasma treatment on the Si side, we have achieved remarkable bonding strengths of up to 10 MPa at a moderate annealing temperature of 150 °C. Notably, the bonding mechanism in our approach differs from that in conventional diffusion-based processes. Here, the dehydration condensation of surface functional groups results in an exceptionally thin interfacial layer, less than 2 nm thick, without the presence of amorphous LN. This innovative fabrication method for LNOS demonstrates superior reliability, piezoelectric performance, thermal management capabilities, and optical transmission qualities, paving the way for cutting-edge photonic and quantum applications.