Asymmetric quantum confinement-induced energetically and spatially splitting Dirac rings in graphene/phosphorene/graphene heterostructure

Li, Chong; Gao, Ji‐Xing; Zi, Yanbo; Wang, Fei; Niu, Chunyao; Cho, Jun-Hyung; Jia, Yu

doi:10.1016/j.carbon.2018.08.057

Cited by 27 publications

(22 citation statements)

References 45 publications

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“…As reported that the asymmetric quantum connement effect induced by the disparate coupling strengths in the different stacking modes could be the cause of discrepant electronic dispersions. 45 Among all these modes, the band gap reaches 64 meV for AA stacking mode, whereas it is only 2.9 and 3.9 meV for AB1 and AB2 stacking modes, respectively. It can be concluded that the stacking method plays a vital role in the band gap.…”

Section: Resultsmentioning

confidence: 96%

Electronic properties of α-graphyne on hexagonal boron nitride and α-BNyne substrates

Wang

et al. 2019

RSC Adv.

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Section: Resultsmentioning

confidence: 96%

Electronic properties of α-graphyne on hexagonal boron nitride and α-BNyne substrates

Wang

et al. 2019

RSC Adv.

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“…However, the Klein tunneling of electrons prevents the efficient confinement of electrons by means of pnp junctions [67][68][69]. As a solution to this problem, it has been suggested to steer the electron beam with incidence angles larger than the critical angle or to use smooth bipolar junctions [61,[70][71][72][73][74][75][76][77][78][79][80][81][82][83][84][85]. Nevertheless, these strategies do not prevent Klein tunneling at normal incidence and hence, reduce the efficiency of the device.…”

Section: Introductionmentioning

confidence: 99%

Phosphorene pnp junctions as perfect electron waveguides

Betancur-Ocampo,

Paredes-Rocha,

Stegmann

2020

Preprint

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The current flow in phosphorene pnp junctions is studied. At the interfaces of the junction, omnidirectional total reflection takes place, named anti-super-Klein tunneling, as this effect is not due to an energetically forbidden region but due to pseudo-spin blocking. The anti-super-Klein tunneling confines electrons within the junction, which thus represents a perfect lossless electron waveguide. Calculating the current flow by applying the Green's function method onto a tight-binding model of phosphorene, it is observed that narrow electron beams propagate in these waveguides like light beams in optical fibers. The perfect guiding is found for all steering angles of the electron beam as the total reflection does not rely on the existence of a critical angle. For low electron energies and narrow junctions, the guided modes of the waveguide are observed. The waveguide operates without any loss only for a specific orientation of the junction. For arbitrary orientations, minor leakage currents are found, which however decay for low electron energies and grazing incidence angles. It is shown that a crossroad shaped pnp junction can be used to split and direct the current flow in phosphorene. The proposed device, a phosphorene pnp junction as a lossless electron waveguide, may not only find applications in nanoelectronics but also in quantum information technology.

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“…This can be particularly observed in graphene-based vdWH nanocomposites. The 2D materials used in combination with graphene include, but are not limited to, TMDs, III–V compounds (e.g., BN), III–VI compounds (e.g., GaS), IV–VI compounds (e.g., GeSe), and phosphorene . The 2D vdWHs comprising graphene that have been investigated include the heterostructures graphene/GaSe, graphene/Janus MoSSe, graphene/GaS, graphene/GeSe, graphene/phosphorene, graphene/InSe, graphene/CeO 2 , graphene/MoS 2 , etc.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Insights into Two-Dimensional IV–V Compounds: Photocatalysts for the Overall Water Splitting and Nanoelectronic Applications

Gao

Shen

et al. 2019

Inorg. Chem.

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Two-dimensional (2D) materials have attracted enormous attention in many fields because of their appealing performances. In this contribution, we perform first-principles calculations on the photocatalytic properties of IV–V compounds, along with the design of a functional Schottky device based on a graphene/SiAs van der Waals heterostructure (vdWH). Our results indicate that eight IV–V compound materials are all excellent photocatalysts for water-splitting reactions with high efficiency of visible light, with the conduction band minimum (CBM) and valence band maximum (VBM) both involving the corresponding band-gap region. It is examined whether a weak acid environment is beneficial for the hydrogen production process. Monolayer GeAs is characterized by an excellent absorption coefficient of up to 105–2 × 105 cm–1 in the visible region. The other nanostructures also have a considerable optical absorption as high as approximately half of 105 cm–1. These illustrate fascinating application prospectives for IV–V compounds in photocatalysis for water splitting under the irradiation of visible light, predicting tremendous significance in the fields of energy conversion and hydrogen production. The graphene/SiAs vdWH nanocomposite at the equilibrium state is featured for an n-type Schottky contact. External strain and electric-field applications are employed to practically present the transition for interface contact between the n- and p-type Schottky contacts or between the Schottky and ohmic contacts, which suggests appealing applications for the graphene/SiAs vdWH as a competitive candidate for functional Schottky devices and nanoelectronic materials.

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Asymmetric quantum confinement-induced energetically and spatially splitting Dirac rings in graphene/phosphorene/graphene heterostructure

Cited by 27 publications

References 45 publications

Electronic properties of α-graphyne on hexagonal boron nitride and α-BNyne substrates

Electronic properties of α-graphyne on hexagonal boron nitride and α-BNyne substrates

Phosphorene pnp junctions as perfect electron waveguides

Theoretical Insights into Two-Dimensional IV–V Compounds: Photocatalysts for the Overall Water Splitting and Nanoelectronic Applications

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