2013
DOI: 10.1137/120886534
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Asymptotic-Preserving Numerical Schemes for the Semiconductor Boltzmann Equation Efficient in the High Field Regime

Abstract: We present asymptotic-preserving numerical schemes for the semiconductor Boltzmann equation efficient in the high field regime. A major challenge in this regime is that there may be no explicit expression of the local equilibrium which is the main component of classical asymptoticpreserving schemes. ], our idea is to penalize the stiff collision term with a classical Bhatnagar-Gross-Krook operator-which is not the local equilibrium in the high field limit-while treating the stiff force term implicitly with the… Show more

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Cited by 13 publications
(8 citation statements)
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References 34 publications
(57 reference statements)
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“…• AP schemes for other kinds of asymptotic behaviour. These include plasmas with a strong magnetic field and drift limits Lemou 2011, Hauck, Chacon anddel Castillo-Negrete 2014), highly oscillatory Vlasov-Poisson models (Crouseilles, Lemou and Mehats 2013) and high-field regimes for kinetic semiconductor equations (Jin and Wang 2013). We refer to the recent review by Degond (2013) for further examples.…”
Section: Discussionmentioning
confidence: 99%
“…• AP schemes for other kinds of asymptotic behaviour. These include plasmas with a strong magnetic field and drift limits Lemou 2011, Hauck, Chacon anddel Castillo-Negrete 2014), highly oscillatory Vlasov-Poisson models (Crouseilles, Lemou and Mehats 2013) and high-field regimes for kinetic semiconductor equations (Jin and Wang 2013). We refer to the recent review by Degond (2013) for further examples.…”
Section: Discussionmentioning
confidence: 99%
“…This form is convenient for designing AP schemes (Jin and Wang 2011) (Crouseilles and Lemou 2011), based on which one can easily use other well-developed AP frameworks. For more general collision operator, for example the semiconductor Boltzmann collision operator, this trick does not apply and one needs other ideas, for example the BGK penalization (Jin and Wang 2013). A variational approach was recently proposed in (Carrillo, Wang, Xu and Yan 2021), using the Wasserstein gradient structure, to get positivity and AP easily.…”
Section: High Electric Fieldmentioning
confidence: 99%
“…A higher-order scheme was constructed in [8], which improved the strict parabolic stability condition to a hyperbolic one. An efficient AP scheme in the high field regime was developed in [25]. The authors in [16] further study the semiconductor Boltzmann equation with a two-scale stiff collision operators, by taking into account different effects including the interactions between electrons and the lattice defects caused by ionized impurities [3]; they design and demonstrate the efficiency and accuracy of an asymptoticpreserving scheme that leads to an energy-transport system as mean free path goes to zero at a discretized level.…”
Section: Introductionmentioning
confidence: 99%