Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy

Abstract

Low-temperature crystal defect dynamics in Si has been studied by a newly developed cryo-high-voltage electron microscopy. The planar {113} defects of self-interstitial atoms were introduced at 94 K by 1 MeV electron irradiation with damage higher than 0.42 displacements per atom (dpa), unlike past findings. The defects once grew and then shrunk during the observation. We show that the nucleation and the dissociation dynamics of the {113} defects can be attributed to an athermal process, which is deduced from anomalously fast diffusion of self-interstitial atoms at a low temperature.

Domain switching dynamics in relaxor ferroelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 revealed by time-resolved high-voltage electron microscopy

“…To meet these rather conflicting demands, high-voltage transmission electron microscopy (HVEM) is a powerful tool in respect of maximum observable thickness with a high spatial resolution. 18,19 Alternative research methods include x-ray diffraction under electric fields 20 or piezoforce microscopy. 21 Although these advanced techniques have excellent advantages, it is practically impossible to observe internal microstructures in real space.…”