ATLAS17LS – A large-format prototype silicon strip sensor for long-strip barrel section of ATLAS ITk strip detector

Unno, Y.; Abo, Y.; Affolder, A.; Allport, P. P.; Bloch, I.; Blue, A.; Fadeyev, V.; Fernández-Tejero, J.; Gregor, I. M.; Haber, C.; Hara, K.; Hommels, Bart; Kamada, S.; Koffas, T.; Lacker, H.; Miyagawa, P. S.; Parzefall, U.; Sawyer, C.; Ullán, M.; Yamamura, K.; Zhu, Hongtu

doi:10.1016/j.nima.2020.164928

Cited by 12 publications

(19 citation statements)

References 8 publications

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“…Three diodes were studied in this measurement (see figures 4a, 4c and 4e), which were designed to have edge regions similar to full size sensors: n-doped strip implants in a p-doped sensor bulk were surrounded by n-doped bias and guard ring implants, while the sensor backside and edge ring were p-doped. HPK diodes used here can be assumed to have an active thickness of 303 [6]-310 [7] µm and a bulk resistivity of 3 kΩ•cm, IFX diodes have a thickness of 300 µm and a bulk resistivity of 3.5 kΩ•cm. For a detailed description of the edge regions of all ATLAS17 ([8], [7]) design diodes, see [5].…”

Section: Methodsmentioning

confidence: 99%

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Mapping the in-plane electric field inside irradiated diodes

Poley

Blue

Buttar

et al. 2020

Nuclear Instruments and Methods in Physics Research Section A:

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A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.6 • 10 15 n eq /cm 2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 2 × 3 µm 2 ). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.

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Section: Methodsmentioning

confidence: 99%

“…HPK diodes used here can be assumed to have an active thickness of 303 [6]-310 [7] µm and a bulk resistivity of 3 kΩ•cm, IFX diodes have a thickness of 300 µm and a bulk resistivity of 3.5 kΩ•cm. For a detailed description of the edge regions of all ATLAS17 ([8], [7]) design diodes, see [5].…”

Section: Methodsmentioning

confidence: 99%

Mapping the in-plane electric field inside irradiated diodes

Poley

Blue

Buttar

et al. 2020

Nuclear Instruments and Methods in Physics Research Section A:

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“…In this study, silicon micro-strip sensors from the so-called ATLAS17LS submission [8] were used. These sensors were manufactured by Hamamatsu Photonics K. K (HPK) as part of a large market survey to find sensor suppliers for both the ATLAS and CMS detector upgrades in preparation for the HL-LHC phase.…”

Section: Silicon Micro-strip Sensorsmentioning

confidence: 99%

Silicon strip defects and their impact on electrical performance of readout electronics

et al. 2021

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In preparation for the High Luminosity LHC (HL-LHC) runs, the ATLAS inner detector will be completely replaced with an all silicon Inner Tracker (ITk). Hybrid silicon pixel modules will be used for the innermost tracking layers, and silicon micro-strip detectors will be used the outer layers of the tracker. During the production of the detector, the sensors, readout electronics, and other components will undergo a series of quality control (QC) and quality assurance tests. Defects in the fabrication of the sensors will be flagged early in the manufacturer's and ATLAS QC tests. A study of the influence of sensor defects was performed to assess the characteristics of these defects in completed modules, and whether any defect posed a risk to the operation of the front-end readout electronics. All defects were found to have no impact on the performance of the front-end readout electronics for healthy amplifier channels, and defects that short the coupling between the strip implant and the metal readout electrode were only noticeable for strip leakage currents in excess of 250 nA, beyond the end-of-life currents expected for most sensors at the HL-LHC.

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“…Thus, the ID will be replaced by a new allsilicon Inner Tracker (ITk) designed to withstand the high radiation damage associated with the anticipated ultimate total integrated luminosity of 4000 fb −1 accumulated during the expected operational time of more than 10 years. During the lifetime of HL-LHC the strip part of the ITk will be exposed to the total particle fluences of 1.6 • 10 15 1 MeV n eq /cm 2 together with the total ionizing doses of 0.66 MGy including the safety factor of 1.5. For this pur-pose, radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are manufactured by Hamamatsu Photonics K.K.…”

Section: Introductionmentioning

confidence: 99%