Ge15Se75Zn10 thin films were deposited onto cleaned glass substrates by the
vacuum thermal evaporation technique. The as-deposited and annealed thin
films were characterized by scanning electron microscopy, X-ray diffraction
and optical spectroscopy. The average particle sizes of the crystallized
GeSe and ZnSe phases increase with increasing annealing temperature. Some
optical parameters of the as-deposited and annealed Ge15Se75Zn10 thin films
were studied using both transmittance T(?) and reflectance R(?)
measurements. The analysis of T(?) and R(?) data revealed the existence of
direct optical band gap (EG) and the corresponding values were calculated to
be 2.913, 2.802 and 2.692 eV for the as-deposited and annealed thin films at
373 and 423 K, respectively. The dispersion of the refractive index is
discussed in terms of the single oscillator Wemple-Didomenico (WD) model.
The width of band tails of localized states (Ee), the single oscillator
energy (E0), the dispersion energy (Ed), the high frequency dielectric
constant (?L) and the steepness parameter (S) were estimated.