Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS<sub>2</sub> and SnSe<sub>2</sub> nanosheets

Sierra-Castillo, Ayrton; Haye, Emile; Acosta, Selene; Arenal, Raúl; Bittencourt, Carla; Colomer, Jean-François

doi:10.1039/d1ra05672g

Cited by 16 publications

(10 citation statements)

References 83 publications

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“…S5b and S5e † present the Sn 3d 5/2 and 3d 3/2 doublet located at 486.14 and 494.54 eV confirming the successful doping of Sn 4+ into Li 5 MSe 4 . 25 Finally, the Se 3d spectra (Fig. S5c and S5f †) with 3d 5/2 and 3d 3/2 at energies 53.39 and 54.32 eV indicate the presence of the Se 2− state signifying the complete reduction of Se to Se 2− in both the compounds, III and IV.…”

Section: Paper Dalton Transactionsmentioning

confidence: 85%

Lithium selenometallates of triel elements, Li₅MSe₄ (M = Al and Ga), aliovalent doping and their ionic conductivity

et al. 2022

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Section: Paper Dalton Transactionsmentioning

confidence: 85%

Lithium selenometallates of triel elements, Li₅MSe₄ (M = Al and Ga), aliovalent doping and their ionic conductivity

et al. 2022

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“…To investigate the chemical states of the fabricated SnS 2 nanosheets, X-ray photoelectron spectroscopy (XPS) is accomplished with the Al Ka X-ray source ( h ν = 1486.6 eV) operating at a vacuum pressure about 10 –7 Pa. The electron peaks of pristine SnS 2 related to the binding energies of Sn 3d5/2, Sn 3d3/2, S 2p3/2, and S 2p1/2 are 486.7, 494.8, 161.6 eV, and 162.3, respectively (Figure d), which is in accordance with the earlier report . The high-resolution S2p core level analysis shows the two peaks of S2p3/2 and S2p1/2, which corresponds to the binding energies of 161.2 and 162.3 eV, respectively, as presented in Figure S1a.…”

Section: Methodsmentioning

confidence: 99%

Self-Powered Humidity Sensors Based on SnS₂ Nanosheets

Shooshtari

Rafiefard

Barzegar

et al. 2022

ACS Appl. Nano Mater.

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With the advent of the Internet of Things (IoT), the development of self-powered sensors has received much attention. Introducing triboelectric nanogenerators (TENGs) as a power source that converts mechanical movement into electrical signals has been admired recently. Moreover, the monitoring of humidity has become enormously essential in several technological contexts from environment monitoring to biomedical applications, thus joining these two subjects provides a huge benefit in achieving self-powered humidity sensors. Here, in this research, facile, lowpriced and self-powered humidity sensors are fabricated utilizing transition-metal dichalcogenides (TMD) nanosheets. Semi-vertical SnS 2 nanosheets are synthesized through a modified chemical vapor deposition method at moderate heat treatment (500 °C) utilizing pristine sensor's substrate and sulfur element on a laser grooved fluorine tin-doped oxide (FTO)/glass. To achieve a selfpowered device, the integrated contact-separated (CS) TENG of FTO and Kapton/Al has been coupled with the projected humidity sensor, through the impedance matching circuit. This self-powered SnS 2 humidity sensor demonstrated an outstanding response of about 400%, fast response and recovery times (∼4, and 7 s), and long-term stability (at least 5 months). Furthermore, the humidity effect on the electrical performance of the SnS 2 layer was studied through first-principle simulations. Based on calculated adsorption energies, charge transfer, electronic band structures, and density of states, H 2 O molecules physisorbed on the SnS 2 nanosheet with a strong adsorption energy of −1.82 eV and 0.0208 e/molecule charges transferred from H 2 O molecules to the surface. Our density functional theory calculations shed light on the humidity sensing mechanism by illustrating that both Sn and Sulfur atoms could act as adsorption sites. The introduced battery-free and self-powered humidity sensors have great conceivable application in wearable/ portable electronics and also smart homes.

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“…19 Unlike atmospheric pressure chemical vapor deposition (APCVD), the operating temperatures in LPCVD are comparatively low, resulting in reaction rate-controlled growth rather than diffusion-controlled growth. 20 The positive outcomes of LPCVD comprise better uniformity in terms of the thickness of film and composition homogeneity. Therefore, in this work, we have utilized LPCVD for the growth of tin selenide.…”

Section: Introductionmentioning

confidence: 99%

“…As a consequence, optoelectronic devices with different phases of the same material significantly differ in their performance parameters. − Therefore, efforts have been rendered recently to control the phase of MCs by using the low-pressure chemical vapor deposition (LPCVD) growth method . Unlike atmospheric pressure chemical vapor deposition (APCVD), the operating temperatures in LPCVD are comparatively low, resulting in reaction rate-controlled growth rather than diffusion-controlled growth . The positive outcomes of LPCVD comprise better uniformity in terms of the thickness of film and composition homogeneity.…”

Section: Introductionmentioning

confidence: 99%

Phase-Controlled Tin Selenide Photodetectors for Visible Blind to Near-Infrared Optical Radiation

Goswami,

Prajapat,

Vashishtha

et al. 2023

ACS Appl. Electron. Mater.

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Layered tin selenides have gained tremendous interest due to their distinct tunable semiconducting properties, narrow band gap, low cost, and feasibility for large-scale production. However, the phase controllability of SnSe and SnSe 2 is a major challenge for device applications, which should be addressed to ensure repeatability of crystallographic phase, morphology, defects, etc. We have synthesized highly crystalline and phase-controlled (mono, di, mix) tin selenide films using a lowpressure chemical vapor deposition technique by coupling the precursor and substrate temperatures. The optoelectronic behavior of the constructed metal−semiconductor− metal (MSM) tin selenide-based devices responds to the wide spectral range from visible blind (UVB) to near-infrared (NIR). The designed SnSe 2 -based photodetector has a high optical response to visible light (532 nm) with responsivity, noise equivalent power, and external quantum efficiency of 1260 mA W −1 , 8.27 × 10 −12 W Hz −1/2 , and 295%, respectively. However, the SnSe-based photodetector exhibits a high response for infrared wavelength (1064 nm) with responsivity, external quantum efficiency, and noise equivalent power of 3320 mA W −1 , 388%, and 2.88 × 10 −12 W Hz −1/2 , respectively. The SnSe-based photodetector outperforms the SnSe 2 and SnSe mix (mixed phase)-based devices in the optical wavelength range from UVB to NIR. A thorough analysis of a phase-controlled tin selenide photodetector with broad optical detecting capability indicates its adaptability to various industrial and technological domains.

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Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS₂ and SnSe₂ nanosheets

Abstract: SnS2 and SnSe2 nanosheets were synthesized vertically aligned in different substrates by an AP-CVD method.

Cited by 16 publications

References 83 publications

Lithium selenometallates of triel elements, Li₅MSe₄ (M = Al and Ga), aliovalent doping and their ionic conductivity

Lithium selenometallates of triel elements, Li₅MSe₄ (M = Al and Ga), aliovalent doping and their ionic conductivity

Self-Powered Humidity Sensors Based on SnS₂ Nanosheets

Phase-Controlled Tin Selenide Photodetectors for Visible Blind to Near-Infrared Optical Radiation

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Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS2 and SnSe2 nanosheets

Abstract: SnS2 and SnSe2 nanosheets were synthesized vertically aligned in different substrates by an AP-CVD method.

Cited by 16 publications

References 83 publications

Lithium selenometallates of triel elements, Li5MSe4 (M = Al and Ga), aliovalent doping and their ionic conductivity

Lithium selenometallates of triel elements, Li5MSe4 (M = Al and Ga), aliovalent doping and their ionic conductivity

Self-Powered Humidity Sensors Based on SnS2 Nanosheets

Phase-Controlled Tin Selenide Photodetectors for Visible Blind to Near-Infrared Optical Radiation

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Product

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Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS₂ and SnSe₂ nanosheets

Lithium selenometallates of triel elements, Li₅MSe₄ (M = Al and Ga), aliovalent doping and their ionic conductivity

Lithium selenometallates of triel elements, Li₅MSe₄ (M = Al and Ga), aliovalent doping and their ionic conductivity

Self-Powered Humidity Sensors Based on SnS₂ Nanosheets