2008
DOI: 10.1002/aoc.1439
|View full text |Cite
|
Sign up to set email alerts
|

Atmospheric pressure chemical vapour deposition of WO3 thin films from a volatile fluorinated tungsten oxo‐alkoxide precursor, W(O)(OCH2CF3)4

Abstract: when used as a single-source precursor or stoichiometric WO 3 when O 2 was used as co-reagent.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
3
0

Year Published

2012
2012
2022
2022

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 13 publications
(4 citation statements)
references
References 21 publications
1
3
0
Order By: Relevance
“…In AACVD, solubility of the precursor in an appropriate solvent is required for aerosol production and transport, but this requirement is less of a limitation on precursor selection than the need for volatility in conventional CVD. Design of single-source precursors for AACVD and LPCVD of WO x has focused on complexes with alkoxide and related ligands such as tungsten pentaethoxide [W­(OEt) 5 ], , tungsten­(VI) oxo complexes with alkoxide, siloxide, aryloxide, or salicylate ancillary ligands, complexes of the type WO­(OR) 3 L [R = t Bu, i Pr, L = acac, hfac, 2-(dimethylamino)­ethanol], , and most recently the tungsten­(VI) oxo–fluoroalkoxide derivatives. , …”
Section: Introductionsupporting
confidence: 59%
“…In AACVD, solubility of the precursor in an appropriate solvent is required for aerosol production and transport, but this requirement is less of a limitation on precursor selection than the need for volatility in conventional CVD. Design of single-source precursors for AACVD and LPCVD of WO x has focused on complexes with alkoxide and related ligands such as tungsten pentaethoxide [W­(OEt) 5 ], , tungsten­(VI) oxo complexes with alkoxide, siloxide, aryloxide, or salicylate ancillary ligands, complexes of the type WO­(OR) 3 L [R = t Bu, i Pr, L = acac, hfac, 2-(dimethylamino)­ethanol], , and most recently the tungsten­(VI) oxo–fluoroalkoxide derivatives. , …”
Section: Introductionsupporting
confidence: 59%
“…The monomeric tungsten oxo-fluoroalkoxides [W(O)(OR f ) 4 ] (OR f = TFE, TFTB, HFTB) have been used in atmospheric pressure or aerosol-assisted chemical vapor deposition experiments to deposit on the glass/ITO substrates either nonstoichiometric WO x (in nitrogen at low deposition temperature 100−250 °C) or stoichiometric WO 3 (when O 2 used as a coreagent). 447,448 At growth temperatures above 300 °C, the W 18 O 49 monoclinic crystalline phase was observed. 448 )…”
Section: Chemical Reviewsmentioning
confidence: 99%
“…(Chi et al have used many Ga­(III) and In­(III) fluorinated functional amino- and iminoalkoxides for the elaboration of M 2 O 3 thin films by low pressure CVD. , These low-melting and volatile complexes [Ga­{OC­(CF 3 ) 2 CH 2 NMe 2 } 2 Cl], [Me 2 Ga­{OC­(CF 3 ) 2 CH 2 NHBu t }], [Me 2 In­{OC­(CF 3 )CHC­(CF 3 )NCH 2 ­CH 2 ­N­Me 2 }], and [Me 2 ­In­{OC­(CF 3 ) 2 ­CH 2 ­NH­CH 2 ­CH 2 ­OMe}] 2 proved to be good precursors for the deposition of Ga 2 O 3 and In 2 O 3 on silicon and quartz at temperatures between 400 and 500 °C using O 2 as a carrier gas. The monomeric tungsten oxo-fluoroalkoxides [W­(O)­(OR f ) 4 ] (OR f = TFE, TFTB, HFTB) have been used in atmospheric pressure or aerosol-assisted chemical vapor deposition experiments to deposit on the glass/ITO substrates either nonstoichiometric WO x (in nitrogen at low deposition temperature 100–250 °C) or stoichiometric WO 3 (when O 2 used as a coreagent). , At growth temperatures above 300 °C, the W 18 O 49 monoclinic crystalline phase was observed …”
Section: Applications As Precursors In Materials Sciencementioning
confidence: 99%
“…Such films are usually produced either by hydrolysis of a suitable precursor in a sol-gel protocol, [7] or by chemical vapour deposition (CVD) from a volatile precursor. [8][9][10] The properties of these films can be modified by the inclusion of a variety of additional metals, [11][12][13] which from a technological perspective require co-hydrolysis of two metal moieties (sol-gel) or a dual-source CVD approach. One variation which removes the practical difficulties of matching hydrolysis / decomposition rates is the use of a single-source precursor (SSP) which incorporates both metals in the same molecule.…”
Section: Introductionmentioning
confidence: 99%