2015
DOI: 10.1166/mex.2015.1262
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Atmospheric pressure growth and optimization of graphene using liquid-injection chemical vapor deposition

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Cited by 10 publications
(4 citation statements)
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“…The growth mechanism is assumed to follow the well-accepted mechanism described in [22, 23]. Here, the decomposed C element is absorbed into the Cu substrate during the heating stage and then is desorbed back to the surface of Cu substrate to form graphene layer during the cooling stage.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The growth mechanism is assumed to follow the well-accepted mechanism described in [22, 23]. Here, the decomposed C element is absorbed into the Cu substrate during the heating stage and then is desorbed back to the surface of Cu substrate to form graphene layer during the cooling stage.…”
Section: Methodsmentioning
confidence: 99%
“…Choi et al reported the growth in oxidized ambient by using a combination of ethanol and methanol as a carbon source [20]. Other similar liquid carbon sources such as benzene [21] and toluene [22] have also being studied. A motivated result on the growth of graphene from natural carbon sources such as camphor [23, 24] has also being reported.…”
Section: Introductionmentioning
confidence: 99%
“…It causes various mutagenesis being non soluble in physiological pH aqueous solution (e.g. graphene/CNTs) or because they cannot be handled …”
Section: Introductionmentioning
confidence: 99%
“…The both Hydrogen (H2) and argon (Ar) gases were used for growing graphene films during fabricate a process [9][10][11][12][13][14][15][16][17][18][19][20][21]. A hydrogen gas acts as a catalyst for methane to be physically adsorbed on surface substrate for graphene growth, etching agent which controls the morphology of graphene during production and leads to crystallization of Cu foil while argon gas (Ar) acts as a carrier gas that provides an inert ambience [22][23][24][25]. In addition, the substrate that properly expected using to synthesis graphene, lowest surface roughness at a non-appeared contaminant as an oxide on surface and the large grain boundary on substrate (111) mechanism crystal orientation.…”
Section: List Of Figuresmentioning
confidence: 99%