Atmospheric Pressure Helium Plasma Treatment on 3C-SiC/Si Surface

Abstract

Abstract. In this paper, the effect of inert gas plasma to the morphology of 0.29µm thick 3C-SiC/Si is studied. Helium was used for the plasma treatment and its effect as the etchant gas to the polished side of 3C-SiC/Si surface was determined. The changes of the surface morphology were monitored using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From the results obtained, it has shown that the morphology of surface properties of 3C-SiC was modified by differences in helium plasma time of exposure and the degree of roughness of the surface changes. The results show by the SEM and AFM shown that plasma treatment had been successfully implemented for the 0.29µm thick 3C-SiC/Si.