Atom chips: Fabrication and thermal properties

Groth, S.; Krüger, Peter; Wildermuth, S.; Folman, R.; Fernholz, T.; Mahalu, D.; Bar‐Joseph, I.; Schmiedmayer, Jörg

doi:10.1063/1.1804601

Cited by 90 publications

(94 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Present atom chips are single layer devices [8], sometimes combined with other structures, either macroscopic [9] or built from a combination of chips fabricated on separate substrates [10,11], limiting the freedom in designing the trapping and manipulation potentials. In this letter we present the implementation of a multi-layer atom chip ( Fig.…”

mentioning

confidence: 99%

“…Our atom chips are fabricated on commercial 700 µm thick p-type Si-wafers with a 100 nm thermal oxide layer for electrical isolation [8]. We start by depositing alignment marks which allow to superimpose the different lay- ers with sub-micron precision.…”

mentioning

confidence: 99%

“…We therefor employ our standard process for high quality atom chip structures [8]: the image reversal resist AZ5214E is structured by traditional UV contact lithography followed by thermal evaporation of Ti (20 nm) and Au (400 nm in this specific example). The structures are created again by lift-off in acetone.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Multilayer atom chips for versatile atom micromanipulation

Trinker¹,

Groth²,

Haslinger³

et al. 2008

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We employ a combination of optical UV-and electron-beam-lithography to create an atom chip combining sub-micron wire structures with larger conventional wires on a single substrate. The new multi-layer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultra cold quantum gases and Bose-Einstein condensates. Large current densities of > 6×10 7 A/cm 2 and high voltages of up to 65 V across 0.3 µm gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose-Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Multilayer atom chips for versatile atom micromanipulation

Trinker¹,

Groth²,

Haslinger³

et al. 2008

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…12 Integration with a SiN x optical layer provides a path towards a monolithic atom-cavity chip with integrated atomic and photonic functionality. Indeed, owing to its moderately high index of refraction ͑n ϳ 2.0-2.5͒ and large transparency window ͑6 m Ͼ Ͼ 300 nm͒, 13,14 SiN x is an excellent material for the on-chip guiding and localization of light.…”

mentioning

confidence: 99%

Integration of fiber-coupled high-Q SiNx microdisks with atom chips

Barclay

Srinivasan

Painter

et al. 2006

Applied Physics Letters

130

100

View full text Add to dashboard Cite

Micron scale silicon nitride ͑SiN x ͒ microdisk optical resonators are demonstrated with Q = 3.6 ϫ 10 6 and an effective mode volume of 15͑ / n͒ 3 at near-visible wavelengths. A hydrofluoric acid wet etch provides sensitive tuning of the microdisk resonances, and robust mounting of a fiber taper provides efficient fiber optic coupling to the microdisks while allowing unfettered optical access for laser cooling and trapping of atoms. Measurements indicate that cesium adsorption on the SiN x surfaces significantly red detunes the microdisk resonances. Parallel integration of multiple ͑10͒ microdisks with a single fiber taper is also demonstrated.

show abstract

“…On the other hand, for sufficiently large intensities the laser power absorbed by the nanotip, as determined by the imaginary part of ǫ L , will cause it to melt. Assuming that the nanotip has a good thermal contact conductance (e.g., comparable to achievable values for wires in atom chips [20]) with some substrate, we estimate that incident laser intensities exceeding 10 mW/µm 2 can be used for silver nanotips at λ L = 780 nm [21]. These two considerations set a lower bound for the tip size z 0 of around hundreds of picometers.…”

mentioning

confidence: 99%

Trapping and Manipulation of Isolated Atoms Using Nanoscale Plasmonic Structures

et al. 2009

View full text Add to dashboard Cite

We propose and analyze a scheme to interface individual neutral atoms with nanoscale solidstate systems. The interface is enabled by optically trapping the atom via the strong near-field generated by a sharp metallic nanotip. We show that under realistic conditions, a neutral atom can be trapped with position uncertainties of just a few nanometers, and within tens of nanometers of other surfaces. Simultaneously, the guided surface plasmon modes of the nanotip allow the atom to be optically manipulated, or for fluorescence photons to be collected, with very high efficiency. Finally, we analyze the surface forces and heating and decoherence rates acting on the trapped atom.Much interest has recently been directed towards hybrid systems that integrate isolated atomic systems with solid-state devices [1,2,3,4]. These efforts are aimed at combining the best of both worlds, namely the excellent coherence and control associated with isolated atoms, ions and molecules, with the miniaturization and integrability associated with solid-state devices. A key ingredient for such integrated devices is the ability to trap, coherently manipulate, and measure individual cold atoms at distances below ∼100 nm from solid-state surfaces.In this Letter, we describe a technique that allows a single atom to be optically trapped within a nanoscale region above the surface of a sharp, conducting nanotip. Under illumination with a single blue-detuned laser beam, the nanotip behaves as a "lightning rod" that generates very large field gradients and an intensity minimum that can be used to tightly trap an atom. Simultaneously, the nanotip supports a set of tightly guided surface plasmon modes to which the trapped atom can very efficiently couple. Under realistic conditions, the strong coupling regime can be reached, where the emission rate into the guided surface plasmons of the nanotip far exceeds that into all other channels. It has been shown that this regime enables efficient fluorescence collection and optical manipulation at a single-photon level [5,6,7]. Finally, we analyze in detail surface effects and photon scattering and their effects on trap lifetimes and atomic coherence times.The trapping technique described in this Letter might enable the realization of several unique applications. For example, the nanotrap can be used for deterministic positioning of single atoms near micro-photonic and nano-photonic structures, such as micro-toroidal resonators [8,9] and photonic crystal cavities [10] (see Fig. 1a). Alternatively, the trap can be used for realization of hybrid quantum systems consisting of single atoms or molecules in the immediate proximity of charged or magnetized solid-state quantum systems, to enable direct strong coupling [11]. Finally, a trapped atom might be used as a novel scanning probe for sensing magnetic or electric fields with nanoscale resolution. We note that forces associated with metallic systems are being explored, in the context of optical tweezers for dielectric objects on surfaces [12] and electro-optica...

show abstract

Atom chips: Fabrication and thermal properties

Cited by 90 publications

References 17 publications

Multilayer atom chips for versatile atom micromanipulation

Multilayer atom chips for versatile atom micromanipulation

Integration of fiber-coupled high-Q SiNx microdisks with atom chips

Trapping and Manipulation of Isolated Atoms Using Nanoscale Plasmonic Structures

Contact Info

Product

Resources

About