Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications

Chang, Alexander S.; Lauhon, Lincoln J.

doi:10.1016/j.cossms.2018.09.002

Cited by 6 publications

(5 citation statements)

References 160 publications

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“…APT has risen in prominence over the past decades to become a routine microscopy and microanalysis technique for the characterization of nanostructured materials. [316][317][318][319] The strength of APT lies in its capacity to provide three-dimensional mapping of the elements with high spatial resolution, notwithstanding their atomic number. APT is hence perfectly suited to analyze the distribution of light elements, particularly C and B, with a sensitivity that can be in the range of only tens of parts-per-million.…”

Section: B Atom Probe Tomography For the Investigation Of Advanced Smentioning

confidence: 99%

“…[339][340][341] The FIB has allowed to precisely target the preparation of specimens for APT [342,343] that enabled to avoid the trial and error approach of the previous decades. Laser-pulsing lifted the requirement that the specimen must be a good electrical conductor to be analyzed by APT, [319,[344][345][346][347] but also increased the yield significantly. [348] The use of FIB allows to first select a microstructural feature of interest by using the scanning electron microscope, including using advanced techniques such as electron backscattered diffraction [189] or electron channeling contrast imaging for instance.…”

Section: B Atom Probe Tomography For the Investigation Of Advanced Smentioning

confidence: 99%

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Current Challenges and Opportunities in Microstructure-Related Properties of Advanced High-Strength Steels

Raabe

Sun

Silva

et al. 2020

Metall Mater Trans A

151

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This is a viewpoint paper on recent progress in the understanding of the microstructure–property relations of advanced high-strength steels (AHSS). These alloys constitute a class of high-strength, formable steels that are designed mainly as sheet products for the transportation sector. AHSS have often very complex and hierarchical microstructures consisting of ferrite, austenite, bainite, or martensite matrix or of duplex or even multiphase mixtures of these constituents, sometimes enriched with precipitates. This complexity makes it challenging to establish reliable and mechanism-based microstructure–property relationships. A number of excellent studies already exist about the different types of AHSS (such as dual-phase steels, complex phase steels, transformation-induced plasticity steels, twinning-induced plasticity steels, bainitic steels, quenching and partitioning steels, press hardening steels, etc.) and several overviews appeared in which their engineering features related to mechanical properties and forming were discussed. This article reviews recent progress in the understanding of microstructures and alloy design in this field, placing particular attention on the deformation and strain hardening mechanisms of Mn-containing steels that utilize complex dislocation substructures, nanoscale precipitation patterns, deformation-driven transformation, and twinning effects. Recent developments on microalloyed nanoprecipitation hardened and press hardening steels are also reviewed. Besides providing a critical discussion of their microstructures and properties, vital features such as their resistance to hydrogen embrittlement and damage formation are also evaluated. We also present latest progress in advanced characterization and modeling techniques applied to AHSS. Finally, emerging topics such as machine learning, through-process simulation, and additive manufacturing of AHSS are discussed. The aim of this viewpoint is to identify similarities in the deformation and damage mechanisms among these various types of advanced steels and to use these observations for their further development and maturation.

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Section: B Atom Probe Tomography For the Investigation Of Advanced Smentioning

confidence: 99%

Section: B Atom Probe Tomography For the Investigation Of Advanced Smentioning

confidence: 99%

Current Challenges and Opportunities in Microstructure-Related Properties of Advanced High-Strength Steels

Raabe

Sun

Silva

et al. 2020

Metall Mater Trans A

151

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“…Moreover, combined APT and high-resolution (S)TEM have recently enabled quantitative measurements of solute segregation at grain boundaries as a function of grain boundary character and misorientation 12,13 . Although APT has been mostly used to analyze bulk materials 14 and some semiconductor nanowires with dopants [15][16][17][18] , it is still a burgeoning technique to investigate freestanding nanomaterials, in particular metal catalyst, metal oxide battery particles, or quantum dots [19][20][21][22][23] . Analyzing porous metal oxide nanomaterials using APT is highly challenging due to the low conductivity of metal oxides and the presence of pores.…”

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confidence: 99%

Atomic‐Scale Mapping of Impurities in Partially Reduced Hollow TiO₂ Nanowires

et al. 2020

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The incorporation of impurities during the chemical synthesis of nanomaterials is usually uncontrolled and rarely reported because of the formidable challenge in measuring trace amounts of often light elements with sub‐nanometer spatial resolution. And yet, these foreign elements (introduced by doping, for example) influence functional properties. We demonstrate how the hydrothermal growth and a partial reduction reaction on hollow TiO2 nanowires leads to the introduction of parts per millions of boron, sodium, and nitrogen. This doping explains the presence of oxygen vacancies and reduced Ti states at the surface, which enhance the functional properties of TiO2. Our results were obtained on model metal oxide nanomaterials and they shed light on a general process that leads to the uncontrolled incorporation of trace impurities in TiO2, thereby, having a strong effect on applications in energy‐harvesting.

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“…[ 10 ] Precisely measuring the location of buried dopants patterned by STM is challenging and can only be accomplished with STM itself for patterns extremely near to the surface. [ 11,12 ] Techniques capable of imaging such nano‐scale structures such as secondary‐ion mass spectrometry (SIMS) [ 13 ] and atom probe tomography, [ 14 ] are typically destructive, making them unsuitable for device quality control. [ 15 ] Two techniques that can image the dopants non‐destructively are broadband electrostatic force microscopy (bb‐EFM) [ 16 ] and infrared ellipsometry, [ 17 ] however both come with limitations.…”

Section: Introductionmentioning

confidence: 99%

“…probe tomography, [14] are typically destructive, making them unsuitable for device quality control. [15] Two techniques that can image the dopants non-destructively are broadband electrostatic force microscopy (bb-EFM) [16] and infrared ellipsometry, [17] however both come with limitations.…”

mentioning

confidence: 99%

Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon

D'Anna

Sánchez

Matmon

et al. 2023

Adv Elect Materials

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The ability to build nanometer-scale dopant structures buried in Si has led to great progress in classical and quantum technologies. [1] As the patterned structures become increasingly small and complex, it becomes indispensable to develop techniques to non-destructively image the dopant structures for device inspection and quality control. [2][3][4] Scanning tunneling microscopy (STM) can be used to pattern acceptors and donors into Si with atomic resolution using hydrogen resist lithography. [5,6] The technique has created complementary metal-oxide-semiconductor compatible structures, including 2D conductive sheets, [7] 3D structures, [8] nano-wires, [9] and quantum dots. [10] Precisely measuring the location of buried dopants patterned by STM is challenging and can only be accomplished with STM itself for patterns extremely near to the surface. [11,12] Techniques capable of imaging such nanoscale structures such as secondary-ion mass spectrometry (SIMS) [13] and atomThe progress of miniaturization in integrated electronics has led to atomic and nanometer-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as P and As. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for building more complex nano-scale devices, such as quantum co-processors, remains an unresolved challenge. Here, X-ray fluorescence is exploited to create an elementspecific image of As dopants in Si, with dopant densities in absolute units and a resolution limited by the beam focal size (here ≈1 µm), without affecting the device's low temperature electronic properties. The As densities provided by the X-ray data are compared to those derived from Hall effect measurements as well as the standard non-repeatable, scanning tunneling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X-ray experiments, we also measured the magneto-conductance, which is dominated by weak localization, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the 1.5 × 10 10 Sv (1.5 × 10 16 Rad cm −2 ) exposure of the device to X-rays, all transport data are unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation-induced motion of the typical As atom and 3% for the loss of activated, carrier-contributing dopants. With next generation synchrotron radiation sources and more advanced optics, the authors foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5 nm.

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Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications

Cited by 6 publications

References 160 publications

Current Challenges and Opportunities in Microstructure-Related Properties of Advanced High-Strength Steels

Current Challenges and Opportunities in Microstructure-Related Properties of Advanced High-Strength Steels

Atomic‐Scale Mapping of Impurities in Partially Reduced Hollow TiO₂ Nanowires

Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon

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Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications

Cited by 6 publications

References 160 publications

Current Challenges and Opportunities in Microstructure-Related Properties of Advanced High-Strength Steels

Current Challenges and Opportunities in Microstructure-Related Properties of Advanced High-Strength Steels

Atomic‐Scale Mapping of Impurities in Partially Reduced Hollow TiO2 Nanowires

Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon

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Atomic‐Scale Mapping of Impurities in Partially Reduced Hollow TiO₂ Nanowires