Atom Probe Tomography of Zinc Oxide Nanowires

Dawahre, Nabil; Shen, Gang; Balci, Soner; Baughman, William; Wilbert, David S.; Harris, Nick; Butler, Lee; Martens, R. L.; Kim, Seongsin Margaret; Kung, Patrick

doi:10.1007/s11664-011-1803-x

Cited by 24 publications

(16 citation statements)

References 32 publications

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“…These ions have been observed in APT mass spectra [10,12,13]. Although we only used a small cluster for the calculations we were able to reproduce F 3.1 V/A ev =˚which is close to the accepted value of 3.0 V/Å.…”

Section: Discussion and Outlooksupporting

confidence: 55%

“…As a result the electric field penetrates the insulating layer and is further modified by its dielectric constant. What is observed in the laser assisted APT of ZnO are mostly Zn 2 þ , Zn þ , O + 2 ions with other combinations such as Zn 2 O 2 þ present to a lesser degree [10,12,13]. However, there is an overlap of O + 2 and Zn 2 þ in the mass spectra making it difficult to determine which is the dominant ion.…”

Section: Introductionmentioning

confidence: 99%

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Field evaporation of insulators and semiconductors: Theoretical insights for ZnO

Karahka

Kreuzer

2015

Ultramicroscopy

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Section: Discussion and Outlooksupporting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

Field evaporation of insulators and semiconductors: Theoretical insights for ZnO

Karahka

Kreuzer

2015

Ultramicroscopy

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“…17 reported earlier, 30 but issues arise when identifying molecular compounds, especially in the case of single element molecules and their charge. 17 reported earlier, 30 but issues arise when identifying molecular compounds, especially in the case of single element molecules and their charge.…”

Section: A Determination Of Suitable Apt Conditions For Gan Based Sementioning

confidence: 99%

Atom probe tomography of AlInN/GaN HEMT structures

Dawahre

Shen

Renfrow

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inUltrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistorsThe authors report a correlated study of the atom probe tomography (APT) of lattice matched AlInN/GaN and strained AlGaN/GaN high electron mobility transistor structures, before and after exposure to 60 Co irradiation. The AlInN/GaN exhibited a decrease in carrier density while the AlGaN/GaN was found to be more radiation tolerant. Analysis of the APT data revealed that the buried interface near the channel exhibited a much larger increase in isosurface roughness at the AlInN/GaN than at the AlGaN/GaN interfaces. This is believed to contribute to the scattering of carriers out of the channel, and the resulting deterioration of the charge transport characteristics. A proxigram analysis showed that the observed increased roughness at the AlInN/GaN heterointerface was not concurrent with a significant change in its diffuseness.

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“…32 The evaporated species we get are Zn 2þ , ZnO 2þ , O 2 þ , and O þ , all of which have been observed in various APT experiments. [9][10][11][12] Looking in detail at the various experiments one notes that their mass spectra differ significantly in the abundance of the various ions. Based on our results, we can speculate about a possible cause for these discrepancies: they might be simply due to the fact that in the experiment it is difficult to determine the local field strength accurately, because it depends crucially on the tip shape and the thickness of the oxide layer.…”

Section: Field Evaporationmentioning

confidence: 99%

Field evaporation of ZnO: A first-principles study

Karahka

Kreuzer

2015

Journal of Applied Physics

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With recent advances in atom probe tomography of insulators and semiconductors, there is a need to understand high electrostatic field effects in these materials as well as the details of field evaporation. We use density functional theory to study field effects in ZnO clusters calculating the potential energy curves, the local field distribution, the polarizability, and the dielectric constant as a function of field strength. We confirm that, as in MgO, the HOMO-LUMO gap of a ZnO cluster closes at the evaporation field strength signaling field-induced metallization of the insulator. Following the structural changes in the cluster at the evaporation field strength, we can identify the field evaporated species, in particular, we show that the most abundant ion, Zn2+, is NOT post-ionized but leaves the surface as 2+ largely confirming the experimental observations. Our results also help to explain problems related to stoichiometry in the mass spectra measured in atom probe tomography.

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Atom Probe Tomography of Zinc Oxide Nanowires

Cited by 24 publications

References 32 publications

Field evaporation of insulators and semiconductors: Theoretical insights for ZnO

Field evaporation of insulators and semiconductors: Theoretical insights for ZnO

Atom probe tomography of AlInN/GaN HEMT structures

Field evaporation of ZnO: A first-principles study

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