Atomic Adsorption-Controlled Magnetic Properties of a Two-Dimensional (2D) Janus Monolayer

Abstract

Nowadays, two-dimensional (2D) materials with asymmetrical Janus structures have attracted extensive research attention due to their unique surface nature. In this work, the Janus B2P6 monolayer is studied as a nonmagnetic semiconductor with an indirect band gap of about 1.32 eV by the density functional method. Then, atomic adsorption engineering on the B2P6 monolayer is explored considering stable configurations with binding energies ranging from −0.28 to −5.28 eV. In particular, Pd, Pt, and Zn can preserve the original band gap of the B2P6 monolayer, and the magnetic characteristics are inspired by Cr, Mn, Sb, Sc, and V adsorption on the (001) B2P6 monolayer with total magnetic moments of 4.78, 3.54, 0.48, 0.75, and 1.00 μB, respectively. It is worth noting that B2P6 adsorbed with a V atom possesses unit magnetic moment, which suggests dilute magnetic semiconductor performance and promising application in spintronics and magnetic storage. Our work provides a theoretical strategy to effectively regulate the electronic and magnetic properties of 2D materials by atomic adsorption.

Co3X8 (X = Cl and Br): multiple phases and magnetic properties of the Kagome lattice

“…For example, the Janus structure exhibits distinct magnetic properties and responses to atomic adsorption on its opposing surfaces. 23,24 The magnetic arrangement of CrI 3 depends on the number of layers and stacking modes. 25,26 Magnetoelectric coupling in bilayer VS 2 results in ferrovalley properties.…”

A graphene/Janus B2P6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field

“…19 The influence of atomic adsorption on the band gap and magnetism of monolayer B 2 P 6 were investigated, confirming that the original band gap was preserved well with the adsorption of Pd, Pt or Zn atoms, and that the magnetic properties of B 2 P 6 appeared with the adsorption of Cr, Mn, Sb, Sc or V atoms. 20 Two-dimensional Janus materials greatly enhance the function of FETs due to the intrinsic built-in electric field resulting from symmetry breaking. [21][22][23] Furthermore, the low power delay, 24 low on-state current 25 and ultrasmall gate length 26 of FETs are realized with the applications of 2D Janus materials, which demonstrate that Janus B 2 P 6 has great potential to be a channel material.…”

Giant unilateral electric-field control of magnetic anisotropy in MgO/Rh2CoSb heterojunctions

“…In particular, with the shrinking of the device size, which is an inexorable trend in the development of emerging electronic devices, large PMA is indispensable for high-density data storage. [9][10][11][12][13][14] However, high PMA means that switching the magnetization of the data bit requires large critical current. This dilemma can be solved by an approach of tuning the PMA while information is written.…”