2020
DOI: 10.1039/d0ra02420a
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Atomic and electronic structures of charge-doping VO2: first-principles calculations

Abstract: The controllable phase transition temperature in charge doping VO2 is coupled with changes in the atomic and electronic structures. The current results provide a variable way to tune the VO2 phase transition temperature through charge doping.

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Cited by 19 publications
(10 citation statements)
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“…For electron doping, on the other hand, the transition temperature decreases only by a few K per additional electron, ranging between −2.2 K and −4.3 K per 10 21 cm –3 electron density increase (in the range from 0 to 3.1 × 10 21 cm –3 ). These findings are in good agreement with the ones in ref . The relaxation of the structure has a rather small effect on the transition temperature compared to the charge-doped systems at neutral geometry, suggesting that atomistic structure rearrangements are not the driving force for the transition temperature change.…”
Section: Resultssupporting
confidence: 92%
See 1 more Smart Citation
“…For electron doping, on the other hand, the transition temperature decreases only by a few K per additional electron, ranging between −2.2 K and −4.3 K per 10 21 cm –3 electron density increase (in the range from 0 to 3.1 × 10 21 cm –3 ). These findings are in good agreement with the ones in ref . The relaxation of the structure has a rather small effect on the transition temperature compared to the charge-doped systems at neutral geometry, suggesting that atomistic structure rearrangements are not the driving force for the transition temperature change.…”
Section: Resultssupporting
confidence: 92%
“…In order to better understand the interplay between charge density and dopant ion in the context of the VO 2 thermochromism, we first studied the effect of bare charge doping on transition temperatures and light absorption in VO 2 . In ref , Chen et al have investigated the effect of charge doping on the former in detail. In accordance with their results, we found that electron and hole doping both reduce T MIT , with the effect of the latter being much stronger as shown in Figure a.…”
Section: Resultsmentioning
confidence: 99%
“…The higher intensity presents an additional contribution from the acceptor level of Co 2+ 3d (∼1 eV), as marked in the diagram, indicating a higher orbital occupancy with more trapped holes induced by Co 3d –V 3d coupling . It was previously reported that the band structure could be tuned by carrier localization . Carriers can be trapped at V or O sites to form V (4‑ n )+ –V 4+ pairs ( n = 1, 2, or 3) .…”
Section: Resultsmentioning
confidence: 84%
“…49 It was previously reported that the band structure could be tuned by carrier localization. 50 Carriers can be trapped at V or O sites to form V (4-n)+ −V 4+ pairs (n = 1, 2, or 3). 8 The V 3d band shift indicates that a V 5+ −V 4+ pair in the Co-doped VO 2 is induced by localized holes and pushes the Fermi level closer to the valence band.…”
Section: Resultsmentioning
confidence: 99%
“…Since Morin reported observing the metal-to-insulator transition (MIT) of VO 2 in 1959 1 , VO 2 has been widely studied to understand the origin of its MIT [2][3][4][5][6][7] and to use it in practical applications including smart windows, batteries, transistors, ultrafast switches, and gas sensors [8][9][10][11][12][13][14][15] . The MIT of VO 2 can be induced by different factors such as heat, an electric field, doping, oxygen vacancy, photons, and a magnetic field 1,[5][6][7][16][17][18][19][20] . A typical critical temperature (T c ) of the MIT of VO 2 is approximately 68 °C 5 .…”
Section: Decoupling the Metal Insulator Transition And Crystal Field mentioning
confidence: 99%