Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Kirubasankar, Balakrishnan; Won, Yo Seob; Adofo, Laud Anim; Choi, Soo Ho; Kim, Soo Min; Kim, Ki Kang

doi:10.1039/d2sc01398c

Cited by 43 publications

(31 citation statements)

References 291 publications

(421 reference statements)

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“…Research on 2D transition metal dichalcogenides (TMDs) has been dramatically increased during the last decade and, in that time, many research groups have demonstrated working transistors with these films [ 136 , 258 , 259 , 260 , 261 , 262 , 263 ]. Among TMDs, molybdenum disulfide (MoS 2 ) [ 22 , 259 , 263 ] and tungsten sulfide (WS 2 ) [ 264 ] are of particular interest for transistors, since they are naturally occurring layered crystals, are robust and relatively abundant, and present a wide band gap; nevertheless, many other TMDs are also readily being investigated [ 132 , 260 , 265 ]. One of the main issues with 2D TMD semiconductor FETs is finding a fitting insulator, whether in the top-gated or back-gated configuration, where the interface defect concentration is minimal and does not negatively impact transistor operation or its long-term reliability [ 21 , 266 , 267 ].…”

Section: Two-dimensional-material-based Gas Sensing Filmsmentioning

confidence: 99%

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Filipovic

Selberherr

2022

Nanomaterials

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During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

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Section: Two-dimensional-material-based Gas Sensing Filmsmentioning

confidence: 99%

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Filipovic

Selberherr

2022

Nanomaterials

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“…Two-dimensional (2D) layered transition metal dichalcogenides, MX 2 (M = Mo and W; X = S and Se), have emerged as promising materials for diverse applications owing to their rich surface chemistry, the presence of surface defects, and active edges. − These materials possess many interesting properties, viz., thickness-dependent band transitions, high charge carrier mobility with a direct band gap, strongly bound excitons, ambipolar characteristics, and enhanced spin–orbit coupling. − In contrast to their other 2D analogues, TMDs are chemically more versatile and active toward chemical modification. − In TMDs, the intralayer M–X bonds are covalent in nature, whereas the layers are sandwiched and stacked together by weak van der Waals interactions. , The edge sites of TMDs possess high surface energy, which makes edges more active sites for chemical transformation . Furthermore, these TMDs are known to have a large number of chalcogenide vacancies considered as defect sites. ,− The properties of these TMDs are greatly dependent upon the nature of the surface and the presence of defect sites.…”

Section: Introductionmentioning

confidence: 99%

Surface Defect-Driven Chemical Transformation of MoSe₂ Nanosheets

et al. 2023

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The chemistry of atomically thin two-dimensional layered transition metal dichalcogenides (TMDs) largely depends upon the presence of defect sites in their structures. Here, we demonstrate the role of defects of MoSe2 nanosheets (NSs) in two different transformative reactions for the synthesis of MoSe2–CdS nano-heterostructures (NHSs) and CdSe quantum dots (QDs). MoSe2–CdS NHSs are synthesized via passivating the defects of MoSe2 using thiol moieties, followed by the growth of CdS over the surface of MoSe2 NSs. Furthermore, in the absence of thiols, we observe that defects in MoSe2 NSs significantly accelerate the cation-exchange process upon direct exposure to the cadmium (Cd) precursor, resulting in the formation of CdSe QDs through cation displacement reaction (CDR). We have probed the transformation of MoSe2 NSs into CdSe QDs through Raman and optical spectroscopic measurements. Furthermore, theoretical calculations under the framework of density functional theory (DFT) suggest that CDR is feasible on the surface of defect-rich NSs, which becomes unfavorable in the case of defect-free or thiol-passivated MoSe2 NSs. These results provide new insights into understanding the multifaceted role of defects of TMDs in different transformative reactions.

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“…[17][18][19][20] Considerable efforts based on compositional or structural modi cation of MoS 2 have been devoted to boosting the electron/ion migration kinetics to achieve favorable sodium storage performance. 21 Conductive substrates (e.g., graphene, MXene, etc.) have been commonly incorporated to improve charge transfer and alleviate volume expansion, [22][23][24][25][26][27] which has been proven to make sense for enhancing rate capability and cycling lifespan.…”

Section: Introductionmentioning

confidence: 99%

[MoS] Insertion Chains Induced Small-Polaron Collapse in MoS2 2D Layers: A Novel Mo2S3 Anode for Ultrafast Sodium Storage

Zhao

Xie

et al. 2023

Preprint

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Molybdenum disulfide (MoS2) with high theoretical capacity has been viewed as a promising anode for sodium-ion batteries, but suffers from inferior rate capability owing to the polaron-induced slow charge transfer. Herein, we proposed a polaron collapse strategy induced by electron-rich insertions to effectively solve the above issue. Specifically, 1D [MoS] chains are inserted into MoS2 to break the symmetry states of 2D layers and induce small-polaron collapse to gain fast charge transfer, so that the as-obtained thermodynamically stable Mo2S3 shows metallic behavior with 107 times larger electrical conductivity than that of MoS2. Theoretical calculations demonstrate that Mo2S3 owns highly delocalized anions, which substantially reduces the interactions of Na − S to efficiently accelerate Na+ diffusion, endowing Mo2S3 lower energy barrier (0.38 vs 0.65 eV of MoS2). The novel Mo2S3 anode exhibits a high capacity of 510 mAh g− 1 at 0.5 C and a superior high-rate stability of 217 mAh g− 1 at 40 C over 15000 cycles. Further in situ and ex situ characterizations reveal the in-depth reversible redox chemistry in Mo2S3. The proposed polaron collapse strategy for intrinsically facilitating charge transfer could be conducive to electrode design for fast-charging batteries.

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Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications,...

Cited by 43 publications

References 291 publications

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Surface Defect-Driven Chemical Transformation of MoSe₂ Nanosheets

[MoS] Insertion Chains Induced Small-Polaron Collapse in MoS2 2D Layers: A Novel Mo2S3 Anode for Ultrafast Sodium Storage

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Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications,...

Cited by 43 publications

References 291 publications

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Surface Defect-Driven Chemical Transformation of MoSe2 Nanosheets

[MoS] Insertion Chains Induced Small-Polaron Collapse in MoS2 2D Layers: A Novel Mo2S3 Anode for Ultrafast Sodium Storage

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Surface Defect-Driven Chemical Transformation of MoSe₂ Nanosheets