Using first-principles calculations, we studied Mn 2 RuZ (Z=Al, Ga, Si, Ge) and their heterojunctions with MgO along (001) direction. All these alloys possess Hg 2 CuTi-type inverse Heusler alloy structure and ferrimagnetic ground state. Our study reveals the half-metallic electronic structure with highly spin-polarized ∆ 1 band, which is robust against atomic disorder. Next we studied the electronic structure of Mn 2 RuAl/MgO and Mn 2 RuGe/MgO heterojunctions. We found that the MnAl-or MnGe-terminated interface is energetically more favorable compared to the MnRuterminated interface. Interfacial states appear at the Fermi level in the minority-spin gap for the Mn 2 RuGe/MgO junction. We discuss the origin of these interfacial states in terms of local environment around each constituent atom. On the other hand, in the Mn 2 RuAl/MgO junction, high spin polarization of bulk Mn 2 RuAl is preserved independent of its termination.