Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires

Chen, Wanghua; Pareige, P.; Castro, Célia; Xu, Tao; Grandidier, B.; Stiévenard, D.; Cabarrocas, Pere Roca i

doi:10.1063/1.4930143

Cited by 9 publications

(8 citation statements)

References 30 publications

(31 reference statements)

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“…Semiconductor nanowires (NWs) are highly desirable for new generations of electronic and photonic devices such as transistors [ 1 ], memory [ 2 ], biosensors [ 3 ], photodetectors [ 4 ], solar cells [ 5 – 8 ], and battery electrodes [ 9 , 10 ]. Vapor-liquid-solid (VLS) is the most widely used method to synthesize NWs, as first demonstrated in the original work of Ellis and Wagner [ 11 ], and Au is the most widely studied metal catalyst for VLS growth [ 12 – 15 ]. However, Au has drawbacks when combined with the most popular semiconductor, silicon (Si), because Au atoms incorporated into Si induce deep level electrical defects [ 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation

et al. 2016

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A comprehensive study of the silicon nanowire growth process has been carried out. Silicon nanowires were grown by plasma-assisted-vapor-solid method using tin as a catalyst. We have focused on the evolution of the silicon nanowire density, morphology, and crystallinity. For the first time, the initial growth stage, which determines the nanowire (NW) density and growth direction, has been observed step by step. We provide direct evidence of the merging of Sn catalyst droplets and the formation of Si nanowires during the first 10 s of growth. We found that the density of Sn droplets decreases from ~9000 Sn droplets/μm2 to 2000 droplets/μm2 after just 10 s of growth. Moreover, the long and straight nanowire density decreases from 170/μm2 after 2 min of growth to less than 10/μm2 after 90 min. This strong reduction in nanowire density is accompanied by an evolution of their morphology from cylindrical to conical, then to bend conical, and finally, to a bend inverted conical shape. Moreover, the changes in the crystalline structure of nanowires are from (i) monocrystalline to (ii) monocrystalline core/defective crystalline shell and then to (iii) monocrystalline core/defective crystalline shell/amorphous shell. The evolutions of NW properties have been explained in detail.

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Section: Introductionmentioning

confidence: 99%

Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation

et al. 2016

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“…Note that the signal intensity in STEM image increases with the atomic number producing chemically sensitive Z-contrast. The NW is in [1][2][3][4][5][6][7][8][9][10] zone axis showing multiple twinning. The corresponding electron diffraction pattern (EDP) being recorded in that axis and parallel to the wire growth axis, the latter was presently [1][2][3][4][5][6][7][8][9][10] (Figure 3 In order to understand the growth mechanism of Au NWs, let us discuss how the Au atoms from the evaporated Au thin film can diffuse and form an Au NW.…”

Section: Resultsmentioning

confidence: 99%

“…2 Since then, many promising applications of NWs from different materials including semiconductors and metals have arisen. [3][4][5][6] Au has been widely used as a catalyst to grow Si NWs 7,8 or even to etch Si for mesostructures. 9 In the case of metal NWs such as Au; Ag and Cu, they have been widely used as transparent conductive materials for electrodes, for example, extensive research on the applications of Ag NWs for solar cells.…”

Section: Little Attention Was Paid Onmentioning

confidence: 99%

Hydrogen Plasma-Assisted Growth of Gold Nanowires

Gong

Zheng

et al. 2020

Crystal Growth & Design

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Due to their innocuity, Au nanowires present an interesting field of applications in biology and, particularly, in cancer therapy. Since their morphology and distribution can greatly affect their performances, being able to control their mode of growth is important. Various elaboration techniques including "top-down" and "bottom-up" approaches have been developed. In this work, we propose an efficient maskless method to grow Au nanowires with the help of hydrogen plasma treatment of Au thin films. We have been able to grow Au nanowires by taking advantage of spinodal dewetting of an Au thin film and the supply of silicon radicals resulting from hydrogen plasma etching of amorphous silicon coating the walls of the reactor. A variety of techniques have been applied to study the microstructure and the optical properties of Au nanowires. A strong photothermal effect of Au nanowires has been demonstrated with the help of visible laser light. In order to study the nanowire growth, the transport of Au atoms is discussed and a growth mechanism is proposed.

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“…The choice of the metal catalyst is key in our deposition method. Au has long been the metal of choice to grow Si wires and still is the most frequently used catalyst [30][31][32]. However, recently efforts have been made to find a valid alternative, as using Au induces deep level defects in the Si structure [33], thus making this catalyst scarcely compatible with the CMOS technology x y z standards.…”

Section: The Deposition Chambermentioning

confidence: 99%

Silicon nanowires to detect electric signals from living cells

Piedimonte

Mazzetta

Fucile

et al. 2019

Mater. Res. Express

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The ability to merge electronic devices with biological systems at the cellular scale is an interesting perspective. Potential applications span from investigating the bio-electric signals in excitable (and non-excitable) cells with an insofar-unreached resolution to plan next-generation therapeutic devices. Semiconductor nanowires (NWs) are well suited for achieving this goal because of their intrinsic size and wide range of possible configurations. However, production of such nanoscale electrodes is pricey, time-consuming and affected by poor compatibility with the Complementary Metal-Oxide-Semiconductor integrated circuits (CMOS-IC) process standards. To take a step forward, we introduced a new method to fabricate small, high-density Silicon NWs (SiNWs) with a fast, relatively inexpensive and low-temperature (200 °C) process. Growth of such SiNWs is compatible with CMOS-IC standards, thus theoretically allowing on-site amplification of bioelectric signals from living cells in tight contact. Here, we report our preliminary data showing the biocompatibility of such SiNWs, as a necessary step to produce a compact device providing super-resolved descriptions of bioelectric waveforms captured from the subcellular to the network level.

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Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires

Abstract: International audienc

Cited by 9 publications

References 30 publications

Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation

Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation

Hydrogen Plasma-Assisted Growth of Gold Nanowires

Silicon nanowires to detect electric signals from living cells

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