1977
DOI: 10.1002/pssa.2210420102
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Atomic diffusion in semiconductor epitaxial structures

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Cited by 23 publications
(29 citation statements)
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“…If we relate the chromium solubility to the concentration of gallium vacancies, it would be naturally expected that this concentration in epitaxial material is found to be much lower than in bulk GaAs. A similar effect was observed in the case of diffusion of copper in epitaxial and bulk GaAs [9].…”
Section: Fabrication Treatment and Testing Of Materials And Structuressupporting
confidence: 77%
“…If we relate the chromium solubility to the concentration of gallium vacancies, it would be naturally expected that this concentration in epitaxial material is found to be much lower than in bulk GaAs. A similar effect was observed in the case of diffusion of copper in epitaxial and bulk GaAs [9].…”
Section: Fabrication Treatment and Testing Of Materials And Structuressupporting
confidence: 77%
“…In this study, it is supposed that the conditions of impurity diffusion from a constant source into a semi-infinite solid are satisfied by the following equation [26]:…”
Section: Methodsmentioning
confidence: 99%
“…A lot of works are dedicated to theoretical calculations and experimental evaluations of this value. [1][2][3][4][5][6][7][8][9][10] However the comparison of reference data reveals rather contradictory results on many systems. For instance, a significant discrepancy between theoretical and experimental data of activation energy was obtained even for such well-investigated process as silicon self-diffusion (3.2 eV and 4.76 eV, respectively).…”
Section: Introductionmentioning
confidence: 99%
“…For instance, a significant discrepancy between theoretical and experimental data of activation energy was obtained even for such well-investigated process as silicon self-diffusion (3.2 eV and 4.76 eV, respectively). [3][4][5] It is customary to distinguish between several types of main diffusion mechanisms in crystals viz., diffusion by internodes, vacancy mechanism, replacement mechanism, etc. The diffusion activation energy equals the value of the potential barrier that has to be overcome by the atom to take a new balanced position in the neighboring node or internode.…”
Section: Introductionmentioning
confidence: 99%
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