Atomic force microscope cantilevers for combined thermomechanical data writing and reading

King, William P.; Kenny, Thomas W.; Goodson, Kenneth E.; Cross, Graham L. W.; Despont, M.; Dürig, U.; Rothuizen, H.; Binnig, G.; Vettiger, P.

doi:10.1063/1.1351846

Cited by 169 publications

(109 citation statements)

References 14 publications

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“…The integration time for each voltage measurement was 1.5 ms. A bias field of Ϫ12 G was applied to the long axis of the pillar to ensure bistability. The parallel to antiparallel switch occurred at −3.65ϫ 10 6 A / cm 2 and the antiparallel to parallel switch occurred at +1.65ϫ 10 6 A / cm 2 . The sloped sections of the curve where resistance decreased with increasing current magnitude ͑both polarities͒ were due to the decrease of magnetoresistance with increasing bias voltage.…”

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confidence: 94%

“…However, this can only be changed a limited number of times and can only erase large areas at a time. 6 In other work, atomic force microscopy ͑AFM͒ has been used to mechanically deform surfaces 7 or to oxidize metals 8 to produce small patterns, but these techniques are not rewritable. Conductive AFM ͑CAFM͒ has been used to read and write polarization bits in polymers 9 and multiferroics, [10][11][12][13] but the lifetime of the recorded data is limited or the resistance/polarization changes over the timescale of a few days before settling into a more permanent value.…”

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confidence: 99%

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Spin transfer torque switching of magnetic tunnel junctions using a conductive atomic force microscope

Evarts

Cao

Ricketts

et al. 2009

Applied Physics Letters

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We show that a nonmagnetic conductive atomic force microscopy probe can be used to read and write magnetic bits using current passed between the tip and bit. The bits were patterned using electron beam lithography from a magnetic tunnel junction ͑MTJ͒ film with in-plane shape anisotropy using an MgO tunnel barrier. Probes were made having a thick Pt coating and could deliver up to several milliamps, so that MTJ structures were easily switched repeatedly using the spin transfer torque effect. © 2009 American Institute of Physics. ͓doi:10.1063/1.3240884͔The ability to switch the magnetization of a nanomagnet using current has tremendous implications for data storage and logic applications. Early work on magnetization reversal using spin transfer torque ͑STT͒ studied effects in metallic spin-valve structures with resistance changes of milliohms; 1 however, the same effect with larger resistance changes has been observed in magnetic tunnel junction ͑MTJ͒ structures.

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confidence: 94%

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confidence: 99%

Spin transfer torque switching of magnetic tunnel junctions using a conductive atomic force microscope

Evarts

Cao

Ricketts

et al. 2009

Applied Physics Letters

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“…Thin polymeric films find use in many technologies such as dielectric insulators, diffusion barriers, sensors, [9] fuel cells, support media and most recently the IBM Millipede [10] to name a few. During their manufacture, by spin or dip coating processes, for example, films are prepared having a kinetically trapped structure or morphology under highly non-equilibrium conditions.…”

Section: Introductionmentioning

confidence: 99%

Resolving fundamental limits of adhesive bonding in microfabrication.

Hall¹,

Frischknecht²,

Emerson³

et al. 2004

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As electronic and optical components reach the micro-and nanoscales, efficient assembly and packaging require the use of adhesive bonds. This work focuses on resolving several fundamental issues in the transition from macro-to micro-to nanobonding. A primary issue is that, as bondline thicknesses decrease, knowledge of the stability and dewetting dynamics of thin adhesive films is important to obtain robust, void-free adhesive bonds. While researchers have studied dewetting dynamics of thin films of model, non-polar polymers, little experimental work has been done regarding dewetting dynamics of thin adhesive films, which exhibit much more complex behaviors. In this work, the areas of dispensing small volumes of viscous materials, capillary fluid flow, surface energetics, and wetting have all been investigated. By resolving these adhesive-bonding issues, we are allowing significantly smaller devices to be designed and fabricated. Simultaneously, we are increasing the manufacturability and reliability of these devices.4

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“…Though the small size of the laser heated regions prevented us from obtaining high quality M-H data, the reading results presented in the next section indicate that the laser heating also causes a large decrease in the magnetic permeability near H¼ 0 Oe. Note that higher density and faster writing are possible using arrays of hot, sub-micron cantilever tips [24,25].…”

Section: Writing Informationmentioning

confidence: 99%

A non-erasable magnetic memory based on the magnetic permeability

Petrie

Wieland

Burke

et al. 2014

Journal of Magnetism and Magnetic Materials

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Burke, R. A.; Newburgh, G. A.; Burnette, J. E.; Fischer, G. A.; and Edelstein, A. S., "A non-erasable magnetic memory based on the magnetic permeability" (2014 a b s t r a c tA non-erasable memory based on using differences in the magnetic permeability is demonstrated. The method can potentially store information indefinitely. Initially the high permeability bits were 10-50 μm wide lines of sputtered permalloy (Ni 81 Fe 19 ) on a glass substrate. In a second writing technique a continuous film of amorphous, high permeability ferromagnetic Metglas (Fe 78 Si 13 B 9 ) was sputtered onto a similar glass substrate. Low permeability, crystalline 50 μm wide lines were then written in the film by laser heating. Both types of written media were read by applying an external probe field that is locally modified by the permeability of each bit. The modifications in the probe field were read by a nearby set of 10 micron wide magnetic tunnel junctions with a signal-to-noise ratio of up to 45 dB. This large response to changes in bit permeability is not altered after the media has been exposed to a 6400 Oe field. While being immediately applicable for data archiving and secure information storage, higher densities are possible with smaller read and write heads.Published by Elsevier B.V.

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Atomic force microscope cantilevers for combined thermomechanical data writing and reading

Cited by 169 publications

References 14 publications

Spin transfer torque switching of magnetic tunnel junctions using a conductive atomic force microscope

Spin transfer torque switching of magnetic tunnel junctions using a conductive atomic force microscope

Resolving fundamental limits of adhesive bonding in microfabrication.

A non-erasable magnetic memory based on the magnetic permeability

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