Atomic Force Microscopy Determination of the Direction of Dislocation Lines in Single Crystals of Bismuth and Its Alloys

Markov, O. I.; Khripunov, Yu. V.

doi:10.1134/s1063774520020157

Cited by 2 publications

(1 citation statement)

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“…Numerical modeling of thin-film structures and nanostructures with screw dislocations and periodic network of dislocations are presented in refs − . Surely, linear defects like dislocations and disclinations at the surface can be easily visualized by scanning tunneling microscopy − or by atomic-force microscopy. − The hidden dislocation lines inside metallic films can be imaged by means of scanning and transmission electron microscopy. − However, both atomic force microscopy and electron microscopy do not allow the testing of local electronic properties (such as local current–voltage dependence, value of superconducting gap, etc). It seems interesting to develop experimental methods based on the tunneling interferometry for deeper analysis of local electronic properties in regions with internal stress near the dislocation lines.…”

Section: Introductionmentioning

confidence: 99%

Observation of Hidden Parts of Dislocation Loops in Thin Pb Films by Means of Scanning Tunneling Spectroscopy

Aladyshkin

Aladyshkina²,

Bozhko

2021

J. Phys. Chem. C

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Local electronic properties of quasi-two-dimensional Pb(111) islands with screw dislocations of different types on their surfaces were experimentally studied by means of lowtemperature scanning tunneling microscopy and spectroscopy in the regime of constant current. A comparison of the topography map, the maps of tunneling current variation, and the differential tunneling conductance acquired simultaneously allows one to visualize the hidden parts of the dislocation loops under the sample surface. We demonstrate that two closely positioned screw dislocations with the opposite Burgers vectors can either (i) connect to each other by the sub-surface dislocation loop or (ii) generate independent hidden edge dislocation lines, which run toward the perimeter of the Pb island. In addition, we found a screw dislocation, which does not produce outcoming sub-surface dislocation loops. Screw dislocations and the hidden dislocation lines are the source of the non-quantized variation of the local thickness of the Pb terraces, affecting the local electronic properties.

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