Atomic-force microscopy of bismuth films

Грабов, В. М.; Демидов, Е. В.; Комаров, В. А.

doi:10.1134/s1063783408070287

Cited by 28 publications

(19 citation statements)

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“…The film structure was studied in air using a Solver P47PRO scanning probe microscope (NT-MDT) by atomic force microscopy (AFM) in the semicontact mode. Cantilevers have a resonance frequency of about 150 kHz [19,20]. For clear identification of crystallites boundaries of thin films, chemical etching was carried out in a solution of nitric and acetic acids.…”

Section: Methods Of Studying the Surface And Structure Of Block Filmsmentioning

confidence: 99%

Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate

et al. 2020

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We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2–6 μ m compared to 10–30 μ m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time.

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Section: Methods Of Studying the Surface And Structure Of Block Filmsmentioning

confidence: 99%

Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate

et al. 2020

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“…Muscovite mica was chosen as a substrate material as mica has an orienting effect on crystalline structure of evaporated bismuth films. As a result, threefold С3 axis is perpendicular to the substrate plane in the obtained films, and it considerably facilitates the analysis and interpretation of the experimental data [1,8] To improve crystalline structure, deposition of bismuth films doped with tellurium achieved by means of vacuum evaporation was carried out with optimal technological parameters to obtain pure bismuth films [1]. A bismuth crystal with adequate concentration of tellurium admixture was used as a source material.…”

Section: Methods Of the Experimentsmentioning

confidence: 99%

“…To study all the obtained films, Solver scanning probe microscope produced by NT-MDT company was used employing the method of atomic force microscopy in semi-contact regime and DRON-7, X-ray diffractometer, was applied to implement the rotating crystal method with the scheme of -2 scanning in copper anode radiation [1,8].…”

Section: Methods Of the Experimentsmentioning

confidence: 99%

“…At present an overwhelming majority of the researches was dedicated to searching for the optimal conditions to obtain bismuth films doped with tellurium and provide for their high level of structural perfection and studying the influence of structure on physical properties of bismuth films [1]. The work on researching the doping influence on the structure and the galvanomagnetic phenomena in thin bismuth films has mainly been carried out abroad; it remains sporadic and lacks system [2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium

Matveev¹

2016

J. Nano- Electron. Phys.

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The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium.

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“…The melting temperature of bismuth is very low (271°C). As a result, bismuth grows as a very rough polycrystalline film, regardless of whether the film is deposited by pulsed laser deposition [10], sputtering [11,12], or thermal evaporation [13][14][15]. Deposited bismuth films have a high roughness, which increases with the film thickness.…”

Section: Introductionmentioning

confidence: 99%

Ultra-flat bismuth films for diamagnetic levitation by template-stripping

et al. 2014

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In this paper we present a method to deposit thin films of bismuth with sub-nanometer surface roughness for application to diamagnetic levitation. Evaporated films of bismuth have a high surface roughness with peak to peak values in excess of 100 nm and average values on the order of 20 nm. We expose the smooth backside of the films using a template stripping method, resulting in a great reduction of the average surface roughness, to 0.8 nm. Atomic force microscope and X-ray diffraction measurements show that the films have a polycrystalline texture with preferential c-axis orientation. On the back side of the film, fine grains are grouped into larger clusters. Cantilever resonance shift measurements indicate that the Young's modulus of the films is on the order of 20 GPa.

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Atomic-force microscopy of bismuth films

Cited by 28 publications

References 1 publication

Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate

Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate

Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium

Ultra-flat bismuth films for diamagnetic levitation by template-stripping

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