Atomic geometry of the Ge(110)c(8×10) structure

Ichikawa, T.

doi:10.1016/j.susc.2004.04.040

Cited by 20 publications

(27 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Reconstructed surfaces of Ge(111)c(2 × 8) and Ge(110)c (8 × 10) were constructed by adding adatoms at positions given by previous experimental and theoretical studies [25,26] to bulk truncated surfaces created from the optimized cubic close-packed structure (a = b = c = 5.763 Å). The reconstructed surfaces were then relaxed until all forces were less than 0.02 eV/Å.…”

Section: Water Liftoff and Raman Resultsmentioning

confidence: 99%

On the rotational alignment of graphene domains grown on Ge(110) andGe(111)

et al. 2015

View full text Add to dashboard Cite

We have used low-energy electron diffraction and microscopy to compare the growth of graphene on hydrogen-free Ge(111) and Ge(110) from an atomic carbon flux. Growth on Ge(110) leads to significantly better rotational alignment of graphene domains with the substrate. To explain the poor rotational alignment on Ge(111), we have investigated experimentally and theoretically how the adatom reconstructions of Ge interact with graphene. We find that the ordering transition of the Ge(111) adatom reconstruction is not significantly perturbed by graphene. Density functional theory calculations show that graphene on reconstructed Ge(110) has large-amplitude corrugations, whereas it is remarkably flat on reconstructed Ge(111). We argue that the absence of corrugations prevents graphene islands from locking into a preferred orientation.

show abstract

Section: Water Liftoff and Raman Resultsmentioning

confidence: 99%

On the rotational alignment of graphene domains grown on Ge(110) andGe(111)

et al. 2015

View full text Add to dashboard Cite

show abstract

“…In Figures 2A and 2B simplified structural models of the (16x2) and c(8x10) reconstructions are shown. For the fully relaxed models we refer to the work of Ichikawa [8,9]. In these papers fully relaxed models of the (16x2) and the c(8x10) reconstructions are shown that are consistent with existing STM data.…”

Section: Resultsmentioning

confidence: 54%

“…Both zigzag rows seem to be composed of pentagon twins, however a more careful inspection of the models (see refs. [8,9]) reveals that the pentagon twins are not exactly the same. For the 4 remainder of this work we will focus our attention on the pentagon twins of the most stable reconstruction, i.e.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Electronic and energetic properties of Ge(110) pentagons

Bampoulis¹,

Acun²,

Zhang³

et al. 2014

Surface Science

View full text Add to dashboard Cite

The electronic and energetic properties of the elementary building block, i.e. a five-membered atom ring (pentagon), of the Ge(110) surface was studied by scanning tunneling microscopy and spectroscopy at room temperature. The Ge(110) surface is composed of three types of domains: two ordered domains ((16x2) and c(8x10)) and a disordered domain. The elementary building block of all three domains is a pentagon. Scanning tunneling spectra recorded on the (16x2), c(8x10) and disordered domains are very similar and reveal three well-defined electronic states. Two electronic states are located 1.1 eV and 0.3 eV below the Fermi level respectively, whereas the third electronic state is located 0.4 eV above the Fermi level. The electronic states at -0.3 eV and 0.4 eV can be ascribed to the pentagons, whilst we tentatively assigned the electronic state at -1.1 eV to a Ge-Ge back bond or trough state. In addition, we have analyzed the straight [1-12] oriented step edges. From the kink density and kink-kink distance distributions we extracted the nearest neighbor interaction energy between the pentagons, which exhibit a strong preference to occur in twins, as well as the strain relaxation energy along the pentagon-twin chains.

show abstract

“…It is shown that the Si(47 35 7) surface shares the same building block. Our study closes the long-debated pentagon structures on (1 1 0) silicon and germanium surfaces.Over the past three decades, large efforts have been made to understand the atomic and electronic structure of (1 1 0) silicon and germanium surfaces using scanning tunneling microscopy (STM) and spectroscopy, photoelectron spectroscopy and first principles calculations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. This indicates both the complexity of the task and its high scientific relevance.…”

mentioning

confidence: 99%

Universal building block for (1 1 0)-family silicon and germanium surfaces

Жачук

Shklyaev

2019

Applied Surface Science

View full text Add to dashboard Cite

The universal building block which is an essential part of all atomic structures on (1 1 0) silicon and germanium surfaces and their vicinals is proposed by combining first-principles calculations and scanning tunneling microscopy (STM). The atomic models for the (1 1 0)−(16×2), (1 1 0)−c(8×10), (1 1 0) − (5 × 8) and (17 15 1) − (2 × 1) surface reconstructions are developed on the basis of the building block structure. The models exhibit very low surface energies and excellent agreements with bias-dependent STM images. It is shown that the Si(47 35 7) surface shares the same building block. Our study closes the long-debated pentagon structures on (1 1 0) silicon and germanium surfaces.Over the past three decades, large efforts have been made to understand the atomic and electronic structure of (1 1 0) silicon and germanium surfaces using scanning tunneling microscopy (STM) and spectroscopy, photoelectron spectroscopy and first principles calculations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. This indicates both the complexity of the task and its high scientific relevance. One of the reasons for the persistent interest to these surfaces is their peculiar properties, such as high hole mobility in the devices fabricated on the Si(1 1 0) surface [21] and strong surface anisotropy. The second feature became especially atrractive due to the recent success in the formation of singledomain (16 × 2) reconstruction on the Si(1 1 0) surface [22,23]. This makes (1 1 0) surfaces very convenient substrates for the growth of one-dimensional objects, such as nanowires [24][25][26][27][28][29]. It is also worth noting that, among all low-index silicon and germanium surfaces, (1 0 0), (1 1 1) and (1 1 0) [ Fig. 1(a)], only the (1 1 0) structure is still not understood, and, therefore, it is of signifcant academic interest as well.The common feature of all reconstructed (1 1 0) silicon and germanium surfaces is the presence of bright spots exhibiting pentagonal or tetragonal shapes (hereafter polygons) in high-resolution STM images depending on acquisition conditions [4,11]. When the Ge(1 1 0) surface is observed at an elevated temperature (above 430 • C), the polygons are closely packed and show no long range order [8,14,30]. However, when the temperature is lowered to about 380 • C the polygons begin to line up and their density is lowered, indicating the formation of the c(8×10) reconstruction. A very long annealing at 380 • C converts the c(8 × 10) reconstruction into the (16 × 2) surface structure. Thus, the (16 × 2) reconstruction is equilibrium, while the c(8 × 10) surface structure is only a transient (metastable) structure of the Ge (1 1 0) surface. The structural transformations on the Si(1 1 0) surface are similar to those of the Ge (1 1 0) surface, but the transient structure is (5 × 8) [16]. The formation of polygons in varied experimental conditions at various temperatures is a strong indication of their exceptional stability owing to low formation energy values. Figure 1. (a) Unit stere...

show abstract

Atomic geometry of the Ge(110)c(8×10) structure

Cited by 20 publications

References 6 publications

On the rotational alignment of graphene domains grown on Ge(110) andGe(111)

On the rotational alignment of graphene domains grown on Ge(110) andGe(111)

Electronic and energetic properties of Ge(110) pentagons

Universal building block for (1 1 0)-family silicon and germanium surfaces

Contact Info

Product

Resources

About