Atomic hydrogen cleaning of GaAs and InP surfaces studied by photoemission spectroscopy

Kikawa, T.; Ochiai, Isao; Takatani, Shinichiro

doi:10.1016/0039-6028(94)91216-5

Cited by 35 publications

(22 citation statements)

References 19 publications

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“…This method has previously been shown to be an efficient, relatively low temperature technique for obtaining clean, wellordered, damage-free GaAs and InP ͑001͒ surfaces. 6,7 In this letter, the removal of oxide and hydrocarbon contamination from the InAs͑110͒ surface by annealing under a flux of atomic hydrogen ͑H*͒ is reported. During AHC, the contaminant vibrational modes were identified and monitored by high resolution electron energy loss spectroscopy ͑HREELS͒.…”

Section: Controlled Oxide Removal For the Preparation Of Damage-freementioning

confidence: 99%

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Veal

McConville

2000

Applied Physics Letters

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Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H* cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process.

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Section: Controlled Oxide Removal For the Preparation Of Damage-freementioning

confidence: 99%

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Veal

McConville

2000

Applied Physics Letters

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“…Atomic hydrogen (AH) cleaning has been shown in a number of studies [1][2][3][4][5][6][7][8][9][10][11][12][13][14] to be a viable alternative method for the preparation of clean, atomically flat surfaces on a variety of III-V semiconductor substrates. The technique has several advantages over conventional thermal cleaning-much lower temperatures (p400 1C) are required; impurities (in particular oxide residues) are removed more rapidly and selectively; the procedure can be performed under UHV conditions; and the presence of a group V source is not required.…”

Section: Introductionmentioning

confidence: 99%

Atomic hydrogen cleaning of low-index GaAs surfaces

Khatiri

Krzyzewski

McConville

et al. 2005

Journal of Crystal Growth

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“…The use of an H* beam was motivated by the recent study on cleaning GaAs surfaces by H*. 8,9 In the cleaning process, Ga 2 O 3 , whose chemical nature is expected to resemble that of Ga 2 Se 3 , is found to be removed from the surface at remarkably low substrate temperature.…”

Section: Shinichiro Takatani and Takeshi Kikawamentioning

confidence: 99%

Digital etching of GaAs using Se molecular beam and atomic hydrogen beam

Takatani

Kikawa

1994

Applied Physics Letters

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A novel digital etching technique for GaAs was investigated. The GaAs surface was first irradiated by a Se molecular beam to form Ga2Se3 on the surface as a result of the Se–As exchange reaction. The surface was then irradiated by an atomic hydrogen (H*) beam to selectively etch the Ga2Se3 layer. These steps were repeated until etched to the desired depth. An etch rate of about 0.2 nm/cycle was obtained at the substrate temperature of 500 °C. The etch rate was nearly independent of the Se and H* irradiation time, suggesting the involvement of a self-limiting mechanism in the etching process.

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Atomic hydrogen cleaning of GaAs and InP surfaces studied by photoemission spectroscopy

Cited by 35 publications

References 19 publications

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Atomic hydrogen cleaning of low-index GaAs surfaces

Digital etching of GaAs using Se molecular beam and atomic hydrogen beam

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