Atomic hydrogen cleaning of Ru-capped EUV multilayer mirror

Motai, Kumi; Oizumi, Hiroaki; Miyagaki, Shinji; Nishiyama, Iwao; Izumi, Akira; Ueno, Tomoya; Miyazaki, Yasuo; Namiki, A.

doi:10.1117/12.711998

Cited by 9 publications

(5 citation statements)

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“…Experimental results have shown that carbon film deposition on mirror surface can cause significant EUV reflectivity loss [40] , leading to unacceptable productivity loss. Carbon film removal to recover the mirror reflectivity using atomic hydrogen treatment has been reported [41,42] . The mirror surface oxidation is considered to be caused by adsorbed water vapor during EUV exposure.…”

Section: Euv Lithographymentioning

confidence: 99%

Challenges of 22 nm and beyond CMOS technology

Huang

Kang

et al. 2009

Sci. China Ser. F-Inf. Sci.

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It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate (HK/MG) stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.

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Section: Euv Lithographymentioning

confidence: 99%

Challenges of 22 nm and beyond CMOS technology

Huang

Kang

et al. 2009

Sci. China Ser. F-Inf. Sci.

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“…There are several ways to clean the carbon contamination, such as Radio Frequency (RF)-O 2 /H 2 , UV/O 2 , EUV/O 2 and atomic hydrogen [5][6][7][8]. Atomic hydrogen is considered to have the most potential for removing carbon contaminants on EUV multilayers because it causes little oxidation or other damage to the surface of the multilayer.…”

Section: Introductionmentioning

confidence: 99%

Mechanism and model of atomic hydrogen cleaning for different types of carbon contamination on extreme ultraviolet multilayers

Song

Gong

2016

Thin Solid Films

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“…The reflective mask for EUV lithography consists of a multilayer reflective film that reflects the light, a capping layer preventing oxidation and contamination of the reflective film, and an absorbing layer that absorbs EUV light to form a pattern. In general, a multi-layer of Mo/Si is used for the multi-layer reflective film, Ru for the capping layer, and Ta, TaN, TaBN, etc are used as the EUV absorbing layer [6][7][8][9][10][11]. In the reflective mask, a thin absorbing layer is required due to the shadowing effect.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer etching of Sn by surface modification with H and Cl radicals

Kim¹,

Jang²,

Kim³

et al. 2022

Nanotechnology

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Sn is the one of the materials that can be used for next generation extreme ultraviolet (EUV) mask material having a high absorption coefficient and, for the fabrication of the next generation EUV mask, a precise etching of Sn is required. In this study, the atomic layer etching (ALE) process was performed for the precise etch thickness control and low damage etching of Sn by the formation SnHxCly compounds on the Sn surface using with H and Cl radicals during the adsorption step and by the removal of the compound using Ar+ ions with a controlled energy during the desorption step. Through this process, optimized ALE conditions with different H/Cl radical combinations that can etch Sn at ~2.6 Å/cycle were identified with a high etch selectivity over Ru which can be used as the capping layer of the EUV mask. In addition, it was confirmed that not only the Sn but also Ru showed almost no physical and chemical damage during the Sn ALE process.

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Atomic hydrogen cleaning of Ru-capped EUV multilayer mirror

Cited by 9 publications

References 0 publications

Challenges of 22 nm and beyond CMOS technology

Challenges of 22 nm and beyond CMOS technology

Mechanism and model of atomic hydrogen cleaning for different types of carbon contamination on extreme ultraviolet multilayers

Atomic layer etching of Sn by surface modification with H and Cl radicals

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