Atomic-layer chemical-vapor-deposition of silicon dioxide films with an extremely low hydrogen content

Comparison of HfSiOx Thin Films Deposited by ALD with Moisture Using Different Silicon Sources

“…TICS (tetra isocyanato silane) is one of the precursors that has been intensively tested, but has not been found to deposit SiO 2 by ALD with moisture without a catalyst (a ternary amine is required to enhance the deposition mechanism) (4). It was confirmed later that SiO 2 by ALD could be deposited using TICS + N(C 2 H 5 ) 3 (5). TICS can be used for "quasi-monolayer" deposition of SiO 2 only in pulse CVD (6), therefore not in state of the art ALD where precursor and oxidizer introductions are separated by a purge time.…”

Studies on optical, chemical, and electrical properties of rapid SiO2 atomic layer deposition using tris(tert-butoxy)silanol and trimethyl-aluminum

“…SiO 2 ALD using SiCl 4 and H 2 O requires high temperatures of >325 8C and large reactant exposure of >10 9 L (1 L = 10 À6 Torr s) [9]. Silicon precursors beside SiCl 4 have been utilized for SiO 2 ALD, including Si(NCO) 4 and H 2 O, (H 3 CO)Si(NCO) 3 and H 2 O 2 , and Si(NCO) 4 and N(C 2 H 5 ) 3 [11,12]. Ozone has also been employed for SiO 2 ALD with SiH 2 Cl 2 at 300 8C and required reactant exposures >10 9 L [13].…”

Room‐Temperature Growth of Silicon Oxide Nanofilms: New Opportunities for Plastic Electronics

“…A practical application of this process is hampered, however, by the complex involvement of pyridine in the growth reactions 7c. In a related process, Yamaguchi et al 4d. used tetraisocyanatesilane Si(NCO) 4 and triethylamine to deposit SiO 2 at 150 °C with a growth rate of 1.2 Å per deposition cycle.…”