Atomic Layer Deposited MoS 2 as a Carbon and Binder Free Anode in Li-ion Battery

Nandi, Dip K.; Sen, Uttam Kumar; Choudhury, Deepankar; Mitra, Sagar; Sarkar, Shaibal K.

doi:10.1016/j.electacta.2014.09.077

Cited by 72 publications

(79 citation statements)

References 58 publications

(118 reference statements)

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“…Increasing the MoCl 5 dose decreased the film thickness close to the precursor inlet, which hints toward etching of the deposited film by MoCl 5 . Later, we also found that Mo(CO) 6 , the other molybdenum precursor used for ALD of MoS 2 , [47][48][49][50][51][52] suffered from heavy precursor decomposition in our reactor already at 110 °C. This was avoided by lowering the temperature below 100 °C, but no film deposition was found in this case.…”

Section: Evaluation Of Published Mos 2 Processesmentioning

confidence: 69%

“…The observed binding energies are among those reported for thin 2H-MoS 2 layers and films (231.6 to 233.2 eV for Mo 3d 3/2 ). [39,40,43,44,[47][48][49]51,52] In addition, about 10% of the molybdenum was present as oxidized MoO 3 (Mo 6+ ) with binding energies [79] of 233.4 and 236.6 eV for Mo 3d 5/2 and Mo 3d 3/2 , respectively. This implies that the film surface is at least partially oxidized in air.…”

Section: Compositionmentioning

confidence: 99%

“…[34,36,37] Other bottom-up techniques used for the deposition of thin MoS 2 films include sputtering, [40] physical vapor transport, [41] pulsed laser deposition, [42] and atomic layer deposition (ALD). [43][44][45][46][47][48][49][50][51][52] Atomic layer deposition is an inherently scalable technique that can be regarded as an advanced modification of CVD. It is based on self-limiting surface reactions of vapor-phase precursors that are alternately pulsed to substrates.…”

Section: Introductionmentioning

confidence: 99%

“…ALD offers large-area uniformity and precise control over film thickness, as well as unmatched conformality, i.e., uniform thickness over substrates with complex 3D shapes. [53][54][55] So far, ALD of MoS 2 has been reported using MoCl 5 with H 2 S, [43][44][45][46] as well as Mo(CO) 6 with H 2 S, [47,52] H 2 S plasma, [48] or dimethyl disulfide. [49][50][51] The films deposited with Mo(CO) 6 have mostly been amorphous due to the low deposition temperatures of 100-200 °C, [47,[49][50][51] although the films deposited with H 2 S plasma were polycrystalline.…”

Section: Introductionmentioning

confidence: 99%

“…[53][54][55] So far, ALD of MoS 2 has been reported using MoCl 5 with H 2 S, [43][44][45][46] as well as Mo(CO) 6 with H 2 S, [47,52] H 2 S plasma, [48] or dimethyl disulfide. [49][50][51] The films deposited with Mo(CO) 6 have mostly been amorphous due to the low deposition temperatures of 100-200 °C, [47,[49][50][51] although the films deposited with H 2 S plasma were polycrystalline. [48] Using MoCl 5 and H 2 S, crystalline MoS 2 films have been deposited by ALD, [43][44][45][46] but a postdeposition annealing [43,46] or high deposition temperatures in excess of 500 °C [45] have still been required, in most cases, to obtain films of sufficient quality.…”

Section: Introductionmentioning

confidence: 99%

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Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Mattinen

Hatanpää

Sarnet

et al. 2017

Adv Materials Inter

111

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Compared to the most well-known 2D material, graphene, which is a semi-metal, the semiconducting 2H phase of MoS 2 is advantageous in having a band gap suitable for electronic applications. In bulk form, MoS 2 has an indirect band gap of 1.3 eV, which increases as a function of decreasing film thickness. In monolayer MoS 2 (thickness ≈0.6 nm), the band gap becomes direct with a width of 1.8 eV. [1] Importantly, to meet the requirements of different applications, properties of MoS 2 and other TMDCs can be tuned by controlling the thickness, [1] doping and alloying, [5][6][7][8] surface modification and functionalization, [9][10][11] strain, [12,13] and by creating heterostructures with other 2D materials. [6,[14][15][16] The appealing properties of TMDCs have led to a wide range of proposed applications. MoS 2 has been extensively studied as a channel material in conventional field-effect transistors, [17][18][19][20][21] as well as phototransistors and other optoelectronic devices. [16,21,22] The 2D structure of TMDCs plays a crucial role in possible applications relying on more exotic quantum phenomena, such as valleytronics. [23,24] MoS 2 has also shown promise in, for example, catalysis, [25] batteries, [26] photovoltaics, [27] sensors, [28] and medicine. [29] The production of high-quality, large-area MoS 2 films with a thickness controllable down to a monolayer, as required in many of the aforementioned applications, still remains a major challenge. Additionally, in many cases, the processing temperature should be kept as low as possible in order to avoid damaging sensitive substrates, such as polymers or nanostructures. Initially, flakes of monolayer MoS 2 were produced from natural MoS 2 crystals using micromechanical exfoliation, a topdown method capable of producing high-quality monolayers, albeit with poor throughput as well as limited control over flake thickness and dimensions. [4,30,31] Liquid-phase exfoliation of bulk crystals, on the other hand, offers good scalability, but often suffers from limited flake size, poor crystallinity, or contamination. [4,31,32] Bottom-up methods offer a more controllable way to produce MoS 2 films. High-quality MoS 2 thin films are most commonly deposited by chemical vapor deposition (CVD) or sulfurization of metal or metal oxide thin films. The most common Molybdenum disulfide (MoS 2 ) is a semiconducting 2D material, which has evoked wide interest due to its unique properties. However, the lack of controlled and scalable methods for the production of MoS 2 films at low temperatures remains a major hindrance on its way to applications. In this work, atomic layer deposition (ALD) is used to deposit crystalline MoS 2 thin films at a relatively low temperature of 300 °C. A new molybdenum precursor, Mo(thd) 3 (thd = 2,2,6,6-tetramethylheptane-3,5-dionato), is synthesized, characterized, and used for film deposition with H 2 S as the sulfur precursor. Self-limiting growth with a low growth rate of ≈0.025 Å cycle −1 , straightforward thickness control, and large-area uni...

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Section: Evaluation Of Published Mos 2 Processesmentioning

confidence: 69%

Section: Compositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Mattinen

Hatanpää

Sarnet

et al. 2017

Adv Materials Inter

111

View full text Add to dashboard Cite

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Electrode Engineering by Atomic Layer Deposition for Sodium‐Ion Batteries: From Traditional to Advanced Batteries

Zhang

et al. 2019

Adv Funct Materials

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Sodium‐ion batteries (SIBs) have emerged as one of the most promising and competitive energy storage systems due to abundant sodium resources and its environmentally friendly features. However, further improvements in the engineering of the SIB electrode/electrolyte interphase—which directly determines the Na‐ion transfer behavior, material structure stability, and sodiation/desodiation property—are highly recommended to meet the continuously increasing requirements for secondary power sources. Reasonably speaking, to promote SIBs, the advanced and controllable interphase/electrode engineering approach exhibits promise by rationally designing the bulk electrode and generating a well‐defined interphase. Atomic layer deposition (ALD) technology, with atomic‐scale deposition, superior uniformity, excellent conformality, and a self‐limiting nature, is thus expected to address the current challenges facing SIBs in terms of low energy density, limited cycling life, and structural instability, and to promote innovations such as multifunctional electrodes and nanostructured materials for advanced SIBs. This review summarizes and discusses the most recent advancements in the interphase engineering of SIBs by ALD via modifying traditional electrodes and designing advanced electrodes (such as 3D, organic, and protected sodium metal electrodes). Furthermore, based on the recent critical progress and current scientific understanding, future perspectives for the engineering of next‐generation SIB electrodes by ALD can be provided.

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Layered Transition Metal Dichalcogenide‐Based Nanomaterials for Electrochemical Energy Storage

et al. 2019

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the nonconstant renewable energy and achieve a stable power output for practical usage. [1,2] As an alternative solution, electrochemical energy storage (EES) systems, i.e., batteries and supercapacitors, can realize the electrical energy storage via the interconversion of chemical and electrical energy. Although EES devices have been widely used in portable electronic devices, electrical vehicles, and even electric grid in the past decades, they still suffer from the limited energy density and cycling stability. [3][4][5] For instance, to realize the driving range of at least 500 km for lithium-ion battery (LIB) powered electric vehicles, the energy densities of 235 Wh kg −1 and 500 Wh L −1 at battery pack level are required. However, the stateof-the-art automotive LIB packs only reach 130-140 Wh kg −1 and over 210 Wh L −1 , respectively. [6,7] Therefore, numerous efforts have been devoted to searching proper active materials with satisfied electrochemical performance for EES devices.Since the successful preparation of graphene in 2004, 2D nanomaterials have attracted worldwide attention due to their unique properties. [8][9][10][11] As a typical example of graphene-like 2D nanomaterials, layered transition metal dichalcogenides (TMDs) with an X-M-X structure (M: transition metal element; X: S, Se, or Te) have shown great potential for applications in energy storage, catalysis, electronics, photonics, etc. [12][13][14] The 2D nature of layered TMD nanomaterials makes them suitable active materials for the EES due to the following aspects: i) The large specific surface area ensures a large contact area between the active materials and the electrolyte, enabling the fast "Faradaic" and "non-Faradaic" reactions at the surfaces of layered TMD nanomaterials. [15,16] ii) The under-coordinated edge sites of layered TMD nanomaterials can act as adsorption sites for metal ions and thus contribute to extra metal-ion storage capacities. [17] iii) The adjacent X-M-X layers in layered TMD nanomaterials are coupled by weak van der Waals forces. The interlayer space between layers can realize not only the fast ion diffusion, insertion and extraction, but also better material utilization during the metal-ion insertion process. [17] iv) The thin and flexible characteristics of 2D TMD nanosheets make them easy to be incorporated into flexible EES devices. [18][19][20][21] Besides the 2D structure, the tunable physical properties of layered TMD nanomaterials also bring about intriguing potential for their application in EES systems. Layered TMDs usually possess three polymorphs, i.e., 1T, 2H, and 3R, standing for trigonal, hexagonal, and rhombohedral phases, respectively. The rapid development of electrochemical energy storage (EES) systems requires novel electrode materials with high performance. A typical 2D nanomaterial, layered transition metal dichalcogenides (TMDs) are regarded as promising materials used for EES systems due to their large specific surface areas and layer structures benefiting fast ion transport. The typical ...

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Atomic Layer Deposited MoS 2 as a Carbon and Binder Free Anode in Li-ion Battery

Cited by 72 publications

References 58 publications

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Electrode Engineering by Atomic Layer Deposition for Sodium‐Ion Batteries: From Traditional to Advanced Batteries

Layered Transition Metal Dichalcogenide‐Based Nanomaterials for Electrochemical Energy Storage

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Atomic Layer Deposited MoS 2 as a Carbon and Binder Free Anode in Li-ion Battery

Cited by 72 publications

References 58 publications

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Electrode Engineering by Atomic Layer Deposition for Sodium‐Ion Batteries: From Traditional to Advanced Batteries

Layered Transition Metal Dichalcogenide‐Based Nanomaterials for Electrochemical Energy Storage

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Product

Resources

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Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth