Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Kalam, Kristjan; Rammula, Raul; Ritslaid, Peeter; Käämbre, Tanel; Link, Joosep; Stern, Raivo; Vinuesa, Guillermo; Dueñas, S.; Castán, Helena; Tamm, Aile; Kukli, Kaupo

doi:10.1088/1361-6528/abfee9

Cited by 4 publications

(3 citation statements)

References 72 publications

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“…Nanolaminates are being investigated for the possibility of nanoengineering, i.e., constructing thin films with a combination of multiple physical properties exactly suitable for a given application. Customizable properties dependent on the layered structure range from mechanical hardness [1][2][3][4][5][6][7][8] to magnetic susceptibility [2,[9][10][11], and refraction properties [1].…”

Section: Introductionmentioning

confidence: 99%

Influence to Hardness of Alternating Sequence of Atomic Layer Deposited Harder Alumina and Softer Tantala Nanolaminates

et al. 2022

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Atomic layer deposited amorphous 70 nm thick Al2O3-Ta2O5 double- and triple-layered films were investigated with the nanoindentation method. The sequence of the oxides from surface to substrate along with the layer thickness had an influence on the hardness causing rises and declines in hardness along the depth yet did not affect the elastic modulus. Hardness varied from 8 to 11 GPa for the laminates having higher dependence on the structure near the surface than at higher depths. Triple-layered Al2O3/Ta2O5/Al2O3 laminate possessed the most even rise of hardness along the depth and possessed the highest hardness out of the laminates (11 GPa at 40 nm). Elastic modulus had steady values along the depth of the films between 145 and 155 GPa.

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Section: Introductionmentioning

confidence: 99%

Influence to Hardness of Alternating Sequence of Atomic Layer Deposited Harder Alumina and Softer Tantala Nanolaminates

et al. 2022

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“…Tabla 2: Lista de muestras fabricadas mediante secuencias de ciclos ZrO 2 :MnO x .El espesor fue medido por elipsometría espectroscópica. Tabla publicada en [165].…”

Section: Estructuras Mim Cuyo Dieléctrico Es Zro 2 Mno X O Combinaci...unclassified

“…Fig. 3.39: Curvas I-V correspondientes a la muestra "pura" de (a) ZrO 2 y (b) MnO x .Imagen publicada en[165].…”

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Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Vinuesa¹

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Como creo que es habitual para todo doctorando, esta tesis ha llegado a su fin gracias a muchas personas que, tanto dentro como fuera de la universidad, han contribuido a mi crecimiento como persona. A todas ellas les agradezco de corazón el camino recorrido juntos:En primer lugar a mis directores de tesis, el Dr. Salvador Dueñas y la Dra. Helena Castán, por su ofrecimiento y disposición a que formase parte de su grupo de investigación y realizase el doctorado con ellos. También debo darles las gracias por su cercanía e incansable amabilidad, siempre están dispuestos a ayudar de cualquiera de las formas. Creo sinceramente que hacen de la Universidad de Valladolid una mejor institución.A mi compañero de laboratorio, Óscar, por su infinita paciencia enseñándome a manejarme en el laboratorio, gracias a él he tenido siempre con quien conversar, y lo más importante, con quien quejarme, la experimentación ha sido siempre mas amena a su lado. Agradezco también al Dr. Héctor García su ayuda en el laboratorio, ya sea en forma de conocimiento o técnicas de experimentación, y al Dr. Benjamín Sahelices su caracter risueño y auxiliador.Si no fuera por la colaboración y comunicación constante con la

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Layer‐Engineered Functional Multilayer Thin‐Film Structures and Interfaces through Atomic and Molecular Layer Deposition

Heikkinen,

Ghiyasi,

Karppinen

2024

Adv Materials Inter

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Atomic layer deposition (ALD) technology is one of the cornerstones of the modern microelectronics industry, where it is exploited in the fabrication of high‐quality inorganic thin films with excellent precision for film thickness and conformality. Molecular layer deposition (MLD) is a counterpart of ALD for purely organic thin films. Both ALD and MLD rely on self‐limiting gas‐surface reactions of vaporized and sequentially pulsed precursors and are thus modular, meaning that different precursor pulsing cycles can be combined in an arbitrary manner for the growth of elaborated superstructures. This allows the fusion of different building blocks — either inorganic or organic — even with contradicting properties into a single thin‐film material, to realize unforeseen material functions which can ultimately lead to novel application areas. Most importantly, many of these precisely layer‐engineered materials with attractive interfacial properties are inaccessible to other synthesis/fabrication routes. In this review, the intention is to present the current state of research in the field by i) summarizing the ALD and MLD processes so far developed for the multilayer thin films, ii) highlighting the most intriguing material properties and potential application areas of these unique layer‐engineered materials, and iii) outlining the future perspectives for this approach.

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Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Cited by 4 publications

References 72 publications

Influence to Hardness of Alternating Sequence of Atomic Layer Deposited Harder Alumina and Softer Tantala Nanolaminates

Influence to Hardness of Alternating Sequence of Atomic Layer Deposited Harder Alumina and Softer Tantala Nanolaminates

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Layer‐Engineered Functional Multilayer Thin‐Film Structures and Interfaces through Atomic and Molecular Layer Deposition

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