Atomic Layer Deposited Ti₂O₃ Thin Films

Abstract

Ti 2 O 3 thin films have been prepared through atomic layer deposition and subjected to electrical resistivity measurements as a function of temperature. The as-prepared films were stable for up to three weeks. In Ti 2 O 3 thin films, the insulator-metal transition is observed at ~80 K, with nearly 3-4 orders of magnitude change in resistivity. The anomalous increase in electrical resistivity in the films is in accordance with the twoband model. However, the energy interval between the bands depending on the crystallographic c/a ratio leads to a change in electrical resistivity as a function of temperature.

A Review of Phase-Change Materials and Their Potential for Reconfigurable Intelligent Surfaces

“…They exhibit MITs as well as semiconductor-metal transitions. The electrical conductivity of Ti 2 O 3 increases from ~10 3 to ~10 4 S/m as it transitions from the insulator phase to metallic phase at ~450 K. However, unlike VO 2 , it does not undergo crystal structure transformation [99,100]. TiO 2 undergoes metal-insulator transition caused by reduction under high-temperature and low oxygen partial pressure.…”

“…Some first-principles calculations exploring these transitions were investigated to help guide the growth and development of the series [103]. In these calculations, it was found that the monoclinic angle of β-Ti 3 O 5 was 91.1 VO2, it does not undergo crystal structure transformation [99,100]. TiO2 undergoes metalinsulator transition caused by reduction under high-temperature and low oxygen partial pressure.…”